Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentra...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2023-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2023/5619799 |
| _version_ | 1797903026831228928 |
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| author | Muhammad Farooq Saleem Ghulam Abbas Ashraf Muhammad Faisal Iqbal Rashid Khan Muhammad Javid Tianwu Wang |
| author_facet | Muhammad Farooq Saleem Ghulam Abbas Ashraf Muhammad Faisal Iqbal Rashid Khan Muhammad Javid Tianwu Wang |
| author_sort | Muhammad Farooq Saleem |
| collection | DOAJ |
| description | InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs. |
| first_indexed | 2024-04-10T09:26:27Z |
| format | Article |
| id | doaj.art-58f6ef0b36f747aeac61f7c04a6886f2 |
| institution | Directory Open Access Journal |
| issn | 1687-9392 |
| language | English |
| last_indexed | 2024-04-10T09:26:27Z |
| publishDate | 2023-01-01 |
| publisher | Hindawi Limited |
| record_format | Article |
| series | International Journal of Optics |
| spelling | doaj.art-58f6ef0b36f747aeac61f7c04a6886f22023-02-20T01:57:31ZengHindawi LimitedInternational Journal of Optics1687-93922023-01-01202310.1155/2023/5619799Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast ExcitationMuhammad Farooq Saleem0Ghulam Abbas Ashraf1Muhammad Faisal Iqbal2Rashid Khan3Muhammad Javid4Tianwu Wang5GBA Branch of Aerospace Information Research InstituteDepartment of PhysicsDepartment of PhysicsZhejiang Provincial Key Laboratory of Advanced Chemical Engineering Manufacture TechnologyInstitute of Advanced Magnetic MaterialsGBA Branch of Aerospace Information Research InstituteInGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.http://dx.doi.org/10.1155/2023/5619799 |
| spellingShingle | Muhammad Farooq Saleem Ghulam Abbas Ashraf Muhammad Faisal Iqbal Rashid Khan Muhammad Javid Tianwu Wang Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation International Journal of Optics |
| title | Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation |
| title_full | Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation |
| title_fullStr | Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation |
| title_full_unstemmed | Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation |
| title_short | Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation |
| title_sort | factors affecting terahertz emission from ingan quantum wells under ultrafast excitation |
| url | http://dx.doi.org/10.1155/2023/5619799 |
| work_keys_str_mv | AT muhammadfarooqsaleem factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation AT ghulamabbasashraf factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation AT muhammadfaisaliqbal factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation AT rashidkhan factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation AT muhammadjavid factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation AT tianwuwang factorsaffectingterahertzemissionfrominganquantumwellsunderultrafastexcitation |