Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentra...

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Bibliographic Details
Main Authors:	Muhammad Farooq Saleem, Ghulam Abbas Ashraf, Muhammad Faisal Iqbal, Rashid Khan, Muhammad Javid, Tianwu Wang
Format:	Article
Language:	English
Published:	Hindawi Limited 2023-01-01
Series:	International Journal of Optics
Online Access:	http://dx.doi.org/10.1155/2023/5619799

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