The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes
In this paper, we investigate the effect of omni-directional reflectors (ODRs) on the light extraction efficiency (LEE) for flip-chip near-ultraviolet light-emitting diodes (LEDs) on patterned (PSS) and flat sapphire substrate (FSS) using three-dimensional finite-difference time-domain method. Diffe...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8598650/ |
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| author | Yonghui Zhang Ji Zhang Yuxin Zheng Ce Sun Kangkai Tian Chunshang Chu Zi-Hui Zhang Jay Guoxu Liu Wengang Bi |
| author_facet | Yonghui Zhang Ji Zhang Yuxin Zheng Ce Sun Kangkai Tian Chunshang Chu Zi-Hui Zhang Jay Guoxu Liu Wengang Bi |
| author_sort | Yonghui Zhang |
| collection | DOAJ |
| description | In this paper, we investigate the effect of omni-directional reflectors (ODRs) on the light extraction efficiency (LEE) for flip-chip near-ultraviolet light-emitting diodes (LEDs) on patterned (PSS) and flat sapphire substrate (FSS) using three-dimensional finite-difference time-domain method. Different design principles of ODR for the flip-chip LEDs on PSS and FSS are proposed to attain optimum LEE. For the flip-chip LED on FSS, the LEE curve is oscillatory with changing the thickness of the SiO<sub>2</sub> layer as a result of the coherent interference in the ODR and the optical cavity tuning effect for light source. Therefore, the thickness of the p-GaN needs to satisfy even times of quarter wave and the thickness of SiO<sub>2</sub> needs to be quarter wave. However, for the flip-chip LED on PSS, both the total internal reflection and the surface plasmon polariton resonance absorption play a major role leading to LEE increasing as the thickness of SiO<sub>2</sub> layer increases. As a result, SiO<sub>2</sub> layer with a thickness of over one wavelength is better, because the energy of evanescent wave decays to sufficiently negligible when it reaches the Al metal. |
| first_indexed | 2024-12-14T12:02:00Z |
| format | Article |
| id | doaj.art-591560e6be9d4dab9b2b29ad6fa31f14 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T12:02:00Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-591560e6be9d4dab9b2b29ad6fa31f142022-12-21T23:01:58ZengIEEEIEEE Photonics Journal1943-06552019-01-011111910.1109/JPHOT.2018.28893198598650The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting DiodesYonghui Zhang0https://orcid.org/0000-0003-1207-4851Ji Zhang1Yuxin Zheng2Ce Sun3Kangkai Tian4Chunshang Chu5Zi-Hui Zhang6https://orcid.org/0000-0003-0638-1118Jay Guoxu Liu7Wengang Bi8https://orcid.org/0000-0001-7736-8450Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaBeijing ShineOn Technology Ltd., Beijing, ChinaInstitute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation and the Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, ChinaIn this paper, we investigate the effect of omni-directional reflectors (ODRs) on the light extraction efficiency (LEE) for flip-chip near-ultraviolet light-emitting diodes (LEDs) on patterned (PSS) and flat sapphire substrate (FSS) using three-dimensional finite-difference time-domain method. Different design principles of ODR for the flip-chip LEDs on PSS and FSS are proposed to attain optimum LEE. For the flip-chip LED on FSS, the LEE curve is oscillatory with changing the thickness of the SiO<sub>2</sub> layer as a result of the coherent interference in the ODR and the optical cavity tuning effect for light source. Therefore, the thickness of the p-GaN needs to satisfy even times of quarter wave and the thickness of SiO<sub>2</sub> needs to be quarter wave. However, for the flip-chip LED on PSS, both the total internal reflection and the surface plasmon polariton resonance absorption play a major role leading to LEE increasing as the thickness of SiO<sub>2</sub> layer increases. As a result, SiO<sub>2</sub> layer with a thickness of over one wavelength is better, because the energy of evanescent wave decays to sufficiently negligible when it reaches the Al metal.https://ieeexplore.ieee.org/document/8598650/Light-emitting diodesomni-directional reflectorlight extraction efficiency. |
| spellingShingle | Yonghui Zhang Ji Zhang Yuxin Zheng Ce Sun Kangkai Tian Chunshang Chu Zi-Hui Zhang Jay Guoxu Liu Wengang Bi The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes IEEE Photonics Journal Light-emitting diodes omni-directional reflector light extraction efficiency. |
| title | The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes |
| title_full | The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes |
| title_fullStr | The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes |
| title_full_unstemmed | The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes |
| title_short | The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes |
| title_sort | effect of sapphire substrates on omni directional reflector design for flip chip near ultraviolet light emitting diodes |
| topic | Light-emitting diodes omni-directional reflector light extraction efficiency. |
| url | https://ieeexplore.ieee.org/document/8598650/ |
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