Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell
Antimony selenide (Sb2Se3) has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material. However, the intrinsic low carrier density and electrical conductivity limited its scope of applications. In this work, an effective ion doping str...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-11-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847821000307 |
| _version_ | 1797716117741895680 |
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| author | Guangxing Liang Xingye Chen Donglou Ren Xiangxing Jiang Rong Tang Zhuanghao Zheng Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Shuo Chen |
| author_facet | Guangxing Liang Xingye Chen Donglou Ren Xiangxing Jiang Rong Tang Zhuanghao Zheng Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Shuo Chen |
| author_sort | Guangxing Liang |
| collection | DOAJ |
| description | Antimony selenide (Sb2Se3) has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material. However, the intrinsic low carrier density and electrical conductivity limited its scope of applications. In this work, an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb2Se3 thin films. The Sn-doped and I-doped Sb2Se3 thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets. As a result, the Sn-doped Sb2Se3 thin film exhibited a great increase in carrier density by several orders of magnitude, by contrast, a less increase with one order of magnitude was achieved for the I-doped Sb2Se3 thin film. Additionally, such cation or anion doping could simultaneously modify the conduction type of Sb2Se3, enabling the first fabrication of a substrate structured Sb2Se3-based quasi-homojunction thin film solar cell with configuration of Mo/Sb2Se3-Sn/Sb2Se3-I/ITO/Ag. The obtained power conversion efficiency exceeding 2% undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity. |
| first_indexed | 2024-03-12T08:16:48Z |
| format | Article |
| id | doaj.art-5918052460354b97b8744fba54301e14 |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T08:16:48Z |
| publishDate | 2021-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-5918052460354b97b8744fba54301e142023-09-02T18:50:04ZengElsevierJournal of Materiomics2352-84782021-11-017613241334Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cellGuangxing Liang0Xingye Chen1Donglou Ren2Xiangxing Jiang3Rong Tang4Zhuanghao Zheng5Zhenghua Su6Ping Fan7Xianghua Zhang8Yi Zhang9Shuo Chen10Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaUniv Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, F-35000, Rennes, FranceShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, ChinaUniv Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226, F-35000, Rennes, FranceTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, Nankai University, Tianjin, 300350, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China; Corresponding author.Antimony selenide (Sb2Se3) has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material. However, the intrinsic low carrier density and electrical conductivity limited its scope of applications. In this work, an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb2Se3 thin films. The Sn-doped and I-doped Sb2Se3 thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets. As a result, the Sn-doped Sb2Se3 thin film exhibited a great increase in carrier density by several orders of magnitude, by contrast, a less increase with one order of magnitude was achieved for the I-doped Sb2Se3 thin film. Additionally, such cation or anion doping could simultaneously modify the conduction type of Sb2Se3, enabling the first fabrication of a substrate structured Sb2Se3-based quasi-homojunction thin film solar cell with configuration of Mo/Sb2Se3-Sn/Sb2Se3-I/ITO/Ag. The obtained power conversion efficiency exceeding 2% undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.http://www.sciencedirect.com/science/article/pii/S2352847821000307Sb2Se3Thin filmIon dopingCarrier densityQuasi-homojunction solar cell |
| spellingShingle | Guangxing Liang Xingye Chen Donglou Ren Xiangxing Jiang Rong Tang Zhuanghao Zheng Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Shuo Chen Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell Journal of Materiomics Sb2Se3 Thin film Ion doping Carrier density Quasi-homojunction solar cell |
| title | Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell |
| title_full | Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell |
| title_fullStr | Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell |
| title_full_unstemmed | Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell |
| title_short | Ion doping simultaneously increased the carrier density and modified the conduction type of Sb2Se3 thin films towards quasi-homojunction solar cell |
| title_sort | ion doping simultaneously increased the carrier density and modified the conduction type of sb2se3 thin films towards quasi homojunction solar cell |
| topic | Sb2Se3 Thin film Ion doping Carrier density Quasi-homojunction solar cell |
| url | http://www.sciencedirect.com/science/article/pii/S2352847821000307 |
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