p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors

p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and...

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Hlavní autoři: Carsten Strobel, Carlos Alvarado Chavarin, Martin Knaut, Matthias Albert, André Heinzig, Likhith Gummadi, Christian Wenger, Thomas Mikolajick
Médium: Článek
Jazyk:English
Vydáno: MDPI AG 2024-07-01
Edice:Nanomaterials
Témata:
phototransistor
GABT
graphene
p-type
silicon
germanium
On-line přístup:https://www.mdpi.com/2079-4991/14/13/1140

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https://www.mdpi.com/2079-4991/14/13/1140

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