Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
The transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO<sub>2</sub>/p<sup>+</sup>-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the me...
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MDPI AG
2019-09-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/10/1087 |
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| author | Jun Tae Jang Geumho Ahn Sung-Jin Choi Dong Myong Kim Dae Hwan Kim |
| author_facet | Jun Tae Jang Geumho Ahn Sung-Jin Choi Dong Myong Kim Dae Hwan Kim |
| author_sort | Jun Tae Jang |
| collection | DOAJ |
| description | The transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO<sub>2</sub>/p<sup>+</sup>-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the metal electrodes are investigated by modulating the oxygen content in the a-IGZO film with the emphasis on the mechanism that determines the boundary of the abrupt/gradual RS. It is found that a bimodal distribution of the effective SB height (Φ<sub>B</sub>) results from further reducing the top electrode voltage (<i>V</i><sub>TE</sub>)-dependent Fermi-level (<i>E</i><sub>F</sub>) followed by the generation of ionized oxygen vacancies (V<sub>O</sub><sup>2+</sup>s). Based on the proposed model, the influences of the readout voltage, the oxygen content, the number of consecutive V<sub>TE</sub> sweeps on Φ<sub>B</sub>, and the memristor current are explained. In particular, the process of V<sub>O</sub><sup>2+</sup> generation followed by the Φ<sub>B</sub> lowering is gradual because increasing the <i>V</i><sub>TE</sub>-dependent <i>E</i><sub>F</sub> lowering followed by the V<sub>O</sub><sup>2+</sup> generation is self-limited by increasing the electron concentration-dependent <i>E</i><sub>F</sub> heightening. Furthermore, we propose three operation regimes: the readout, the potentiation in gradual RS, and the abrupt RS. Our results prove that the Au/Ti/a-IGZO/SiO<sub>2</sub>/p<sup>+</sup>-Si memristors are promising for the monolithic integration of neuromorphic computing systems because the boundary between the gradual and abrupt RS can be controlled by modulating the SiO<sub>2</sub> thickness and IGZO work function. |
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| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T11:07:24Z |
| publishDate | 2019-09-01 |
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| spelling | doaj.art-591e6ca925a1467b8b92c3ee37a820e92022-12-22T04:28:15ZengMDPI AGElectronics2079-92922019-09-01810108710.3390/electronics8101087electronics8101087Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic ComputingJun Tae Jang0Geumho Ahn1Sung-Jin Choi2Dong Myong Kim3Dae Hwan Kim4School of Electrical Engineering, Kookmin University, Seoul 02707, KoreaSchool of Electrical Engineering, Kookmin University, Seoul 02707, KoreaSchool of Electrical Engineering, Kookmin University, Seoul 02707, KoreaSchool of Electrical Engineering, Kookmin University, Seoul 02707, KoreaSchool of Electrical Engineering, Kookmin University, Seoul 02707, KoreaThe transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO<sub>2</sub>/p<sup>+</sup>-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the metal electrodes are investigated by modulating the oxygen content in the a-IGZO film with the emphasis on the mechanism that determines the boundary of the abrupt/gradual RS. It is found that a bimodal distribution of the effective SB height (Φ<sub>B</sub>) results from further reducing the top electrode voltage (<i>V</i><sub>TE</sub>)-dependent Fermi-level (<i>E</i><sub>F</sub>) followed by the generation of ionized oxygen vacancies (V<sub>O</sub><sup>2+</sup>s). Based on the proposed model, the influences of the readout voltage, the oxygen content, the number of consecutive V<sub>TE</sub> sweeps on Φ<sub>B</sub>, and the memristor current are explained. In particular, the process of V<sub>O</sub><sup>2+</sup> generation followed by the Φ<sub>B</sub> lowering is gradual because increasing the <i>V</i><sub>TE</sub>-dependent <i>E</i><sub>F</sub> lowering followed by the V<sub>O</sub><sup>2+</sup> generation is self-limited by increasing the electron concentration-dependent <i>E</i><sub>F</sub> heightening. Furthermore, we propose three operation regimes: the readout, the potentiation in gradual RS, and the abrupt RS. Our results prove that the Au/Ti/a-IGZO/SiO<sub>2</sub>/p<sup>+</sup>-Si memristors are promising for the monolithic integration of neuromorphic computing systems because the boundary between the gradual and abrupt RS can be controlled by modulating the SiO<sub>2</sub> thickness and IGZO work function.https://www.mdpi.com/2079-9292/8/10/1087a-igzo memristorschottky barrier tunnelingnon filamentary resistive switchinggradual and abrupt modulationbimodal distribution of effective schottky barrier heightionized oxygen vacancy |
| spellingShingle | Jun Tae Jang Geumho Ahn Sung-Jin Choi Dong Myong Kim Dae Hwan Kim Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing Electronics a-igzo memristor schottky barrier tunneling non filamentary resistive switching gradual and abrupt modulation bimodal distribution of effective schottky barrier height ionized oxygen vacancy |
| title | Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing |
| title_full | Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing |
| title_fullStr | Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing |
| title_full_unstemmed | Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing |
| title_short | Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing |
| title_sort | control of the boundary between the gradual and abrupt modulation of resistance in the schottky barrier tunneling modulated amorphous indium gallium zinc oxide memristors for neuromorphic computing |
| topic | a-igzo memristor schottky barrier tunneling non filamentary resistive switching gradual and abrupt modulation bimodal distribution of effective schottky barrier height ionized oxygen vacancy |
| url | https://www.mdpi.com/2079-9292/8/10/1087 |
| work_keys_str_mv | AT juntaejang controloftheboundarybetweenthegradualandabruptmodulationofresistanceintheschottkybarriertunnelingmodulatedamorphousindiumgalliumzincoxidememristorsforneuromorphiccomputing AT geumhoahn controloftheboundarybetweenthegradualandabruptmodulationofresistanceintheschottkybarriertunnelingmodulatedamorphousindiumgalliumzincoxidememristorsforneuromorphiccomputing AT sungjinchoi controloftheboundarybetweenthegradualandabruptmodulationofresistanceintheschottkybarriertunnelingmodulatedamorphousindiumgalliumzincoxidememristorsforneuromorphiccomputing AT dongmyongkim controloftheboundarybetweenthegradualandabruptmodulationofresistanceintheschottkybarriertunnelingmodulatedamorphousindiumgalliumzincoxidememristorsforneuromorphiccomputing AT daehwankim controloftheboundarybetweenthegradualandabruptmodulationofresistanceintheschottkybarriertunnelingmodulatedamorphousindiumgalliumzincoxidememristorsforneuromorphiccomputing |