Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
The transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO<sub>2</sub>/p<sup>+</sup>-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the me...
Main Authors: | Jun Tae Jang, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-09-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/8/10/1087 |
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