Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching
Abstract Porous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear...
Main Authors: | Yijie Li, Nguyen Van Toan, Zhuqing Wang, Khairul Fadzli Bin Samat, Takahito Ono |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2021-04-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | https://doi.org/10.1186/s11671-021-03524-z |
Similar Items
-
Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application
by: Chen Li, et al.
Published: (2020-12-01) -
Nanostructure and optical propertes of porous silicon layer
by: Shihab A. Motar, et al.
Published: (2015-09-01) -
Study of Characteristics of Porous Silicon by Electrochemical Etching
by: Hasan Hadi Hussein
Published: (2013-01-01) -
Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching
by: Haider Amer Khalaf, et al.
Published: (2015-10-01) -
The Structure and Electrical Properties of Porous Silicon Prepared by Electrochemical Etching
by: Narges Zamil Abdulzahra
Published: (2011-10-01)