| Summary: | Solution-processed oxide dielectrics are widely studied as alternatives to SiO<sub>2</sub>, SiN<sub>x</sub> in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectrics TFT by low-temperature post-treatment. Here, an effective strategy is proposed to evaluate low temperature solution-processed ZrO<sub>2</sub> TFT in terms of uniformity, film density and electrical performance by employing TG/DSC, drop analyzer, XRR and a novel μ-PCD measurement. Particularly, μ-PCD measurement provides valuable information on homogeneity and defect level. The optimized device with ZrNO<sub>3</sub> as dielectric precursor and ethyl alcohol as solvent through spin coating process annealed at 200°C shows a saturation mobility of 8.6 cm<sup>2</sup>V<sup>-1</sup>S<sup>-1</sup>, I<sub>on</sub>/I<sub>off</sub> ratio about 1.1×10<sup>6</sup>, subthreshold swing about 334 mV/decade with a low leakage current density of 5×10<sup>-5</sup> A/cm<sup>2</sup> at 10V. This article offers a convenient way for precursor optimization towards low leakage current and high homogeneity solution-processed oxide dielectrics for TFT devices.
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