Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device
Solution-processed oxide dielectrics are widely studied as alternatives to SiO<sub>2</sub>, SiN<sub>x</sub> in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielect...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8890618/ |
| _version_ | 1819291245529268224 |
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| author | Wei Cai Honglong Ning Shangxiong Zhou Zhennan Zhu Rihui Yao Jianqiu Chen Ruiqiang Tao Zhiqiang Fang Xubing Lu Junbiao Peng |
| author_facet | Wei Cai Honglong Ning Shangxiong Zhou Zhennan Zhu Rihui Yao Jianqiu Chen Ruiqiang Tao Zhiqiang Fang Xubing Lu Junbiao Peng |
| author_sort | Wei Cai |
| collection | DOAJ |
| description | Solution-processed oxide dielectrics are widely studied as alternatives to SiO<sub>2</sub>, SiN<sub>x</sub> in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectrics TFT by low-temperature post-treatment. Here, an effective strategy is proposed to evaluate low temperature solution-processed ZrO<sub>2</sub> TFT in terms of uniformity, film density and electrical performance by employing TG/DSC, drop analyzer, XRR and a novel μ-PCD measurement. Particularly, μ-PCD measurement provides valuable information on homogeneity and defect level. The optimized device with ZrNO<sub>3</sub> as dielectric precursor and ethyl alcohol as solvent through spin coating process annealed at 200°C shows a saturation mobility of 8.6 cm<sup>2</sup>V<sup>-1</sup>S<sup>-1</sup>, I<sub>on</sub>/I<sub>off</sub> ratio about 1.1×10<sup>6</sup>, subthreshold swing about 334 mV/decade with a low leakage current density of 5×10<sup>-5</sup> A/cm<sup>2</sup> at 10V. This article offers a convenient way for precursor optimization towards low leakage current and high homogeneity solution-processed oxide dielectrics for TFT devices. |
| first_indexed | 2024-12-24T03:35:34Z |
| format | Article |
| id | doaj.art-594b4840b3bb49cb85abc88fcd520b67 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-24T03:35:34Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-594b4840b3bb49cb85abc88fcd520b672022-12-21T17:17:04ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-0171140114410.1109/JEDS.2019.29512038890618Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT DeviceWei Cai0Honglong Ning1https://orcid.org/0000-0001-9518-5738Shangxiong Zhou2Zhennan Zhu3Rihui Yao4https://orcid.org/0000-0002-1362-1784Jianqiu Chen5Ruiqiang Tao6Zhiqiang Fang7Xubing Lu8Junbiao Peng9Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaInstitute for Advanced Materials, South China Normal University, Guangzhou, ChinaState Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou, ChinaInstitute for Advanced Materials, South China Normal University, Guangzhou, ChinaInstitute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, ChinaSolution-processed oxide dielectrics are widely studied as alternatives to SiO<sub>2</sub>, SiN<sub>x</sub> in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectrics TFT by low-temperature post-treatment. Here, an effective strategy is proposed to evaluate low temperature solution-processed ZrO<sub>2</sub> TFT in terms of uniformity, film density and electrical performance by employing TG/DSC, drop analyzer, XRR and a novel μ-PCD measurement. Particularly, μ-PCD measurement provides valuable information on homogeneity and defect level. The optimized device with ZrNO<sub>3</sub> as dielectric precursor and ethyl alcohol as solvent through spin coating process annealed at 200°C shows a saturation mobility of 8.6 cm<sup>2</sup>V<sup>-1</sup>S<sup>-1</sup>, I<sub>on</sub>/I<sub>off</sub> ratio about 1.1×10<sup>6</sup>, subthreshold swing about 334 mV/decade with a low leakage current density of 5×10<sup>-5</sup> A/cm<sup>2</sup> at 10V. This article offers a convenient way for precursor optimization towards low leakage current and high homogeneity solution-processed oxide dielectrics for TFT devices.https://ieeexplore.ieee.org/document/8890618/TFTsolution-processedoxide dielectricmicrowave photoconductivity decaysubthreshold swing (SS) |
| spellingShingle | Wei Cai Honglong Ning Shangxiong Zhou Zhennan Zhu Rihui Yao Jianqiu Chen Ruiqiang Tao Zhiqiang Fang Xubing Lu Junbiao Peng Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device IEEE Journal of the Electron Devices Society TFT solution-processed oxide dielectric microwave photoconductivity decay subthreshold swing (SS) |
| title | Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device |
| title_full | Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device |
| title_fullStr | Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device |
| title_full_unstemmed | Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device |
| title_short | Effective Evaluation Strategy Toward Low Temperature Solution-Processed Oxide Dielectrics for TFT Device |
| title_sort | effective evaluation strategy toward low temperature solution processed oxide dielectrics for tft device |
| topic | TFT solution-processed oxide dielectric microwave photoconductivity decay subthreshold swing (SS) |
| url | https://ieeexplore.ieee.org/document/8890618/ |
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