Resistive switching in Si2Te3 nanowires
As a silicon-based chalcogenide, semiconducting Si2Te3 has recently attracted attention as an emerging layered 2D material. Here, single-crystalline Si2Te3 nanowires (NWs) are synthesized by chemical vapor deposition (CVD). The Si2Te3 NWs grow along the [0001] direction, which is perpendicular to th...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5060675 |