A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
Abstract This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scatterin...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-06-01
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| Series: | Nano Convergence |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s40580-019-0189-y |