The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Metal–Semiconductor Field-Effect Transistors

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga<sub>2</sub>O<sub>3</sub> Metal–Semiconductor Field-Effect Transistors

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristi...

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Bibliographic Details
Main Authors: Han-Sol Ro, Sung Ho Kang, Sungyeop Jung
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
metal–semiconductor field-effect transistors
work function
device structure
technology computer-aided design
numerical simulation
Online Access:https://www.mdpi.com/1996-1944/15/3/913
Description
Summary:We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga<sub>2</sub>O<sub>3</sub> metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.
ISSN:1996-1944

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