785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices
Three-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-st...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9875953/ |
| _version_ | 1798034051446079488 |
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| author | Hyunsoo Kwak Changmin Ahn Yongjin Na Jinho Bae Jungwon Kim |
| author_facet | Hyunsoo Kwak Changmin Ahn Yongjin Na Jinho Bae Jungwon Kim |
| author_sort | Hyunsoo Kwak |
| collection | DOAJ |
| description | Three-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-structures on such devices for high density. In order to inspect the 3D semiconductor devices, it is critical to measure the heights, depths, and overall surface profiles of the micro-structures made with silicon materials. Here, we demonstrate precise surface imaging for silicon devices by using a femtosecond mode-locked laser centered at 785 nm wavelength and an electro-optic sampling-based time-of-flight detection method with sub-10-nanometer axial precision. We could successfully measure the surface profiles as well as the step heights of silicon wafer stacks and micro-scale structures on silicon substrates. |
| first_indexed | 2024-04-11T20:37:43Z |
| format | Article |
| id | doaj.art-59a2b940f03149d5b261759d259e8116 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-04-11T20:37:43Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-59a2b940f03149d5b261759d259e81162022-12-22T04:04:18ZengIEEEIEEE Photonics Journal1943-06552022-01-011451810.1109/JPHOT.2022.32039889875953785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon DevicesHyunsoo Kwak0Changmin Ahn1Yongjin Na2Jinho Bae3Jungwon Kim4https://orcid.org/0000-0001-5979-5774Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaKorea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaKorea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaKorea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaKorea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaThree-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-structures on such devices for high density. In order to inspect the 3D semiconductor devices, it is critical to measure the heights, depths, and overall surface profiles of the micro-structures made with silicon materials. Here, we demonstrate precise surface imaging for silicon devices by using a femtosecond mode-locked laser centered at 785 nm wavelength and an electro-optic sampling-based time-of-flight detection method with sub-10-nanometer axial precision. We could successfully measure the surface profiles as well as the step heights of silicon wafer stacks and micro-scale structures on silicon substrates.https://ieeexplore.ieee.org/document/9875953/Electro-optic samplingfrequency combsemiconductor device metrologysurface profilometry |
| spellingShingle | Hyunsoo Kwak Changmin Ahn Yongjin Na Jinho Bae Jungwon Kim 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices IEEE Photonics Journal Electro-optic sampling frequency comb semiconductor device metrology surface profilometry |
| title | 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices |
| title_full | 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices |
| title_fullStr | 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices |
| title_full_unstemmed | 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices |
| title_short | 785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices |
| title_sort | 785 nm frequency comb based time of flight detection for 3d surface profilometry of silicon devices |
| topic | Electro-optic sampling frequency comb semiconductor device metrology surface profilometry |
| url | https://ieeexplore.ieee.org/document/9875953/ |
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