Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure

Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure

This work reports on the optical properties of self-assembled InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy. A sigmoidal temperature-dependent variation of the bandgap energy of the dots is detected from the photoluminescence (PL) investigations of the studied sample. This sigmoidal d...

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Bibliographic Details
Main Authors: Rihani Jawher, Mehrez Oueslati, Vincent Sallet, Jean-Christophe Harmand, Radhwen Chtourou
Format: Article
Language:English
Published: Elsevier 2022-02-01
Series:Applied Surface Science Advances
Subjects:
Quantum Dots
Deep localized states
Carrier exchange in the QD structures
Photoluminescence spectroscopy
Temperature-dependent PL measurements
Pump power-dependent PL investigations
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523921001458

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http://www.sciencedirect.com/science/article/pii/S2666523921001458

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