Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash
Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient (Tc...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9264190/ |
| _version_ | 1828968118185099264 |
|---|---|
| author | Dan Wu Hailong You Xiaoguang Wang Shujing Zhong Qi Sun |
| author_facet | Dan Wu Hailong You Xiaoguang Wang Shujing Zhong Qi Sun |
| author_sort | Dan Wu |
| collection | DOAJ |
| description | Reading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient (Tco). The results suggested that the Tco of low temperature programmed high temperature read is larger than high temperature programmed low temperature read and this difference is about 2-3mv/°C, which makes against the temperature compensation of reading voltage and lead to irreparable data errors even there is error correction codes. Furthermore, the critical factor of this difference was demonstrated that is the charge loss during low temperature programmed high temperature read and the Vth shift caused by charge loss is up to 30 percent. Based on this, we proposed to optimize the Tco consistency by shortening the interval time of erase to program in endurance cycling stage and confirmed that this method is effective by experiment. As the time interval becomes smaller, the difference of the Tco decreases as well, which have great reference signification for improving the reliability of 3D NAND flash memory. |
| first_indexed | 2024-12-14T12:04:21Z |
| format | Article |
| id | doaj.art-59edf79b3fc441329cb7f39a35314afc |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T12:04:21Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-59edf79b3fc441329cb7f39a35314afc2022-12-21T23:01:54ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-019222610.1109/JEDS.2020.30356489264190Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND FlashDan Wu0https://orcid.org/0000-0003-1478-0717Hailong You1https://orcid.org/0000-0003-3427-5320Xiaoguang Wang2Shujing Zhong3Qi Sun4School of Microelectronics, Xidian University, Xi’an, ChinaSchool of Microelectronics, Xidian University, Xi’an, ChinaYangtze Memory Technologies Company Ltd., Wuhan, ChinaYangtze Memory Technologies Company Ltd., Wuhan, ChinaSchool of Automation and Information Engineering, Xi’an University of Technology, Xi’an, ChinaReading data at a temperature which different from writing can cause a large number of failed bits in 3D NAND Flash memory. In this work, the threshold voltage (Vth) temperature effect of 3D NAND flash memory cell was investigated and a method was proposed to optimize its temperature coefficient (Tco). The results suggested that the Tco of low temperature programmed high temperature read is larger than high temperature programmed low temperature read and this difference is about 2-3mv/°C, which makes against the temperature compensation of reading voltage and lead to irreparable data errors even there is error correction codes. Furthermore, the critical factor of this difference was demonstrated that is the charge loss during low temperature programmed high temperature read and the Vth shift caused by charge loss is up to 30 percent. Based on this, we proposed to optimize the Tco consistency by shortening the interval time of erase to program in endurance cycling stage and confirmed that this method is effective by experiment. As the time interval becomes smaller, the difference of the Tco decreases as well, which have great reference signification for improving the reliability of 3D NAND flash memory.https://ieeexplore.ieee.org/document/9264190/3D NAND flashtemperature effecttemperature coefficientVth distributionreliability |
| spellingShingle | Dan Wu Hailong You Xiaoguang Wang Shujing Zhong Qi Sun Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash IEEE Journal of the Electron Devices Society 3D NAND flash temperature effect temperature coefficient Vth distribution reliability |
| title | Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash |
| title_full | Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash |
| title_fullStr | Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash |
| title_full_unstemmed | Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash |
| title_short | Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash |
| title_sort | experimental investigation of threshold voltage temperature effect during cross temperature write x2013 read operations in 3 d nand flash |
| topic | 3D NAND flash temperature effect temperature coefficient Vth distribution reliability |
| url | https://ieeexplore.ieee.org/document/9264190/ |
| work_keys_str_mv | AT danwu experimentalinvestigationofthresholdvoltagetemperatureeffectduringcrosstemperaturewritex2013readoperationsin3dnandflash AT hailongyou experimentalinvestigationofthresholdvoltagetemperatureeffectduringcrosstemperaturewritex2013readoperationsin3dnandflash AT xiaoguangwang experimentalinvestigationofthresholdvoltagetemperatureeffectduringcrosstemperaturewritex2013readoperationsin3dnandflash AT shujingzhong experimentalinvestigationofthresholdvoltagetemperatureeffectduringcrosstemperaturewritex2013readoperationsin3dnandflash AT qisun experimentalinvestigationofthresholdvoltagetemperatureeffectduringcrosstemperaturewritex2013readoperationsin3dnandflash |