Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor
Abstract Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device. Landau–Khalatnikov equations are used in deriving the parameter values...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Hindawi-IET
2021-10-01
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Series: | IET Circuits, Devices and Systems |
Subjects: | |
Online Access: | https://doi.org/10.1049/cds2.12064 |