Exhaustive characterization of modified Si vacancies in 4H-SiC
The negatively charged silicon vacancy VSi−$\left({\mathrm{V}}_{\mathrm{S}\mathrm{i}}^{-}\right)$ in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals a...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2022-09-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2022-0400 |