A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line
A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics usin...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9870800/ |
| _version_ | 1798001146662486016 |
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| author | Sunwoo Lee Wansik Kim Sosu Kim Min-Su Kim Junghyun Kim |
| author_facet | Sunwoo Lee Wansik Kim Sosu Kim Min-Su Kim Junghyun Kim |
| author_sort | Sunwoo Lee |
| collection | DOAJ |
| description | A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm <inline-formula> <tex-math notation="LaTeX">$\times1.2$ </tex-math></inline-formula> mm. |
| first_indexed | 2024-04-11T11:31:27Z |
| format | Article |
| id | doaj.art-5a52936508f3414e8ac470cd64b48b1d |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-11T11:31:27Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-5a52936508f3414e8ac470cd64b48b1d2022-12-22T04:26:06ZengIEEEIEEE Access2169-35362022-01-0110938949390010.1109/ACCESS.2022.32031909870800A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled LineSunwoo Lee0https://orcid.org/0000-0001-7645-8702Wansik Kim1Sosu Kim2https://orcid.org/0000-0002-1110-7896Min-Su Kim3https://orcid.org/0000-0002-7566-5408Junghyun Kim4https://orcid.org/0000-0001-9424-3377Department of Electrical and Electronic Engineering, Hanyang University, Ansan, Republic of KoreaLIGNex1, Yongin, Republic of KoreaAgency for Defense Development, Daejeon, Republic of KoreaDepartment of Information and Electronic Engineering, Mokpo National University, Muan, Republic of KoreaDepartment of Electrical and Electronic Engineering, Hanyang University, Ansan, Republic of KoreaA new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm <inline-formula> <tex-math notation="LaTeX">$\times1.2$ </tex-math></inline-formula> mm.https://ieeexplore.ieee.org/document/9870800/AmplifierW-bandGaN-on-siliconinterstage matching techniquelow-characteristic impedance transmission linemicrostrip-coupled line |
| spellingShingle | Sunwoo Lee Wansik Kim Sosu Kim Min-Su Kim Junghyun Kim A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line IEEE Access Amplifier W-band GaN-on-silicon interstage matching technique low-characteristic impedance transmission line microstrip-coupled line |
| title | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
| title_full | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
| title_fullStr | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
| title_full_unstemmed | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
| title_short | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
| title_sort | w band amplifier with a new wide band interstage matching technique using self resonance of a microstrip coupled line |
| topic | Amplifier W-band GaN-on-silicon interstage matching technique low-characteristic impedance transmission line microstrip-coupled line |
| url | https://ieeexplore.ieee.org/document/9870800/ |
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