Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device...

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Hlavní autoři: Junjie Li, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Zhe Cao, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Jun Luo, Wenwu Wang, Henry H. Radamson
Médium: Článek
Jazyk:English
Vydáno: MDPI AG 2020-04-01
Edice:Nanomaterials
Témata:
inner spacer
gate-all-around (GAA)
nanowire
nanosheet
field effect transistor
nanostructure manufacture
On-line přístup:https://www.mdpi.com/2079-4991/10/4/793

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