Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1...
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MDPI AG
2018-08-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/18/8/2551 |
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| author | Xiaofeng Zhao Chenchen Jin Qi Deng Meiwei Lv Dianzhong Wen |
| author_facet | Xiaofeng Zhao Chenchen Jin Qi Deng Meiwei Lv Dianzhong Wen |
| author_sort | Xiaofeng Zhao |
| collection | DOAJ |
| description | A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity. |
| first_indexed | 2024-04-14T06:14:50Z |
| format | Article |
| id | doaj.art-5a610fe2aaf94b93b6ae6f915c46521e |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-14T06:14:50Z |
| publishDate | 2018-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-5a610fe2aaf94b93b6ae6f915c46521e2022-12-22T02:08:14ZengMDPI AGSensors1424-82202018-08-01188255110.3390/s18082551s18082551Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive TransistorsXiaofeng Zhao0Chenchen Jin1Qi Deng2Meiwei Lv3Dianzhong Wen4School of Electronics Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronics Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronics Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronics Engineering, Heilongjiang University, Harbin 150080, ChinaSchool of Electronics Engineering, Heilongjiang University, Harbin 150080, ChinaA monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity.http://www.mdpi.com/1424-8220/18/8/2551two-dimensional magnetic field sensorsilicon magnetic sensitive transistormonolithic integrationdifference structureMEMS technology |
| spellingShingle | Xiaofeng Zhao Chenchen Jin Qi Deng Meiwei Lv Dianzhong Wen Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors Sensors two-dimensional magnetic field sensor silicon magnetic sensitive transistor monolithic integration difference structure MEMS technology |
| title | Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors |
| title_full | Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors |
| title_fullStr | Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors |
| title_full_unstemmed | Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors |
| title_short | Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors |
| title_sort | fabrication technology and characteristics research of a monolithically integrated 2d magnetic field sensor based on silicon magnetic sensitive transistors |
| topic | two-dimensional magnetic field sensor silicon magnetic sensitive transistor monolithic integration difference structure MEMS technology |
| url | http://www.mdpi.com/1424-8220/18/8/2551 |
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