Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser
Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has...
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MDPI AG
2022-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/8/1291 |
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| author | Lukang Wang You Zhao Yu Yang Manman Zhang Yulong Zhao |
| author_facet | Lukang Wang You Zhao Yu Yang Manman Zhang Yulong Zhao |
| author_sort | Lukang Wang |
| collection | DOAJ |
| description | Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm<sup>2</sup> and 4.97 J/cm<sup>2</sup>, respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm<sup>2</sup> due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser. |
| first_indexed | 2024-03-09T09:51:52Z |
| format | Article |
| id | doaj.art-5a647d77347c4a4f8bc30a165dff5985 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T09:51:52Z |
| publishDate | 2022-08-01 |
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| series | Micromachines |
| spelling | doaj.art-5a647d77347c4a4f8bc30a165dff59852023-12-02T00:01:39ZengMDPI AGMicromachines2072-666X2022-08-01138129110.3390/mi13081291Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond LaserLukang Wang0You Zhao1Yu Yang2Manman Zhang3Yulong Zhao4State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaState Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaFemtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has been performed on infrared single and multiple pulses (1035 nm) femtosecond laser ablation of SiC at various processing parameters. Diameters of laser ablation spots on 4H-SiC were measured to estimate the absorption threshold for material modification and structural transformation, which were 2.35 J/cm<sup>2</sup> and 4.97 J/cm<sup>2</sup>, respectively. In the multiple-pulse scribing ablation for microgrooves, the ablation threshold dropped to 0.70 J/cm<sup>2</sup> due to the accumulation effect when the effective pulse number reached 720. The calculated average of the thermally stimulated ablation depth of 4H-SiC is 22.4 nm, which gradually decreased with the raising of the effective pulse number. For obtaining square trenches with precise and controllable depths and a smooth bottom in 4H-SiC, the effects of processing parameters on the material removal rate and surface roughness are discussed. The ablation rate per pulse is almost constant, even if the effective pulse number varies. The reduction of laser spot overlapping ratio in x direction has a greater weakening effect on the material removal rate than that in y direction. The precise amount of material removal can still be controlled, while modulating the surface roughness of the ablated features by changing the hatch rotation angle. This research will help to achieve controllable, accurate, and high-quality machining results in SiC ablation, using infrared femtosecond laser.https://www.mdpi.com/2072-666X/13/8/1291infraredfemtosecond lasersilicon carbideablation threshold |
| spellingShingle | Lukang Wang You Zhao Yu Yang Manman Zhang Yulong Zhao Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser Micromachines infrared femtosecond laser silicon carbide ablation threshold |
| title | Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser |
| title_full | Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser |
| title_fullStr | Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser |
| title_full_unstemmed | Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser |
| title_short | Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser |
| title_sort | experimental investigation on ablation of 4h sic by infrared femtosecond laser |
| topic | infrared femtosecond laser silicon carbide ablation threshold |
| url | https://www.mdpi.com/2072-666X/13/8/1291 |
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