Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction
Harvesting energetic carriers from plasmonic resonance has been a hot topic in the field of photodetection in the last decade. By interfacing a plasmonic metal with a semiconductor, the photoelectric conversion mechanism, based on hot carrier emission, is capable of overcoming the band gap limitatio...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/27/20/6922 |
| _version_ | 1797470892739002368 |
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| author | Zhiwei Sun Yongsheng Zhong Yajin Dong Qilin Zheng Xianghong Nan Zhong Liu Long Wen Qin Chen |
| author_facet | Zhiwei Sun Yongsheng Zhong Yajin Dong Qilin Zheng Xianghong Nan Zhong Liu Long Wen Qin Chen |
| author_sort | Zhiwei Sun |
| collection | DOAJ |
| description | Harvesting energetic carriers from plasmonic resonance has been a hot topic in the field of photodetection in the last decade. By interfacing a plasmonic metal with a semiconductor, the photoelectric conversion mechanism, based on hot carrier emission, is capable of overcoming the band gap limitation imposed by the band-to-band transition of the semiconductor. To date, most of the existing studies focus on plasmonic structural engineering in a single metal-semiconductor (MS) junction system and their responsivities are still quite low in comparison to conventional semiconductor, material-based photodetection platforms. Herein, we propose a new architecture of metal-semiconductor-metal (MSM) junctions on a silicon platform to achieve efficient hot hole collection at infrared wavelengths with a photoconductance gain mechanism. The coplanar interdigitated MSM electrode’s configuration forms a back-to-back Schottky diode and acts simultaneously as the plasmonic absorber/emitter, relying on the hot-spots enriched on the random Au/Si nanoholes structure. The hot hole-mediated photoelectric response was extended far beyond the cut-off wavelength of the silicon. The proposed MSM device with an interdigitated electrode design yields a very high photoconductive gain, leading to a photocurrent responsivity up to several A/W, which is found to be at least 1000 times higher than that of the existing hot carrier based photodetection strategies. |
| first_indexed | 2024-03-09T19:42:22Z |
| format | Article |
| id | doaj.art-5a75fb179a9e44758c2c351113558f68 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-09T19:42:22Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-5a75fb179a9e44758c2c351113558f682023-11-24T01:33:57ZengMDPI AGMolecules1420-30492022-10-012720692210.3390/molecules27206922Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal JunctionZhiwei Sun0Yongsheng Zhong1Yajin Dong2Qilin Zheng3Xianghong Nan4Zhong Liu5Long Wen6Qin Chen7Institute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaCollege of Life Science and Technology, Jinan University, Guangzhou 510632, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaInstitute of Nanophotonics, Jinan University, Guangzhou 511443, ChinaHarvesting energetic carriers from plasmonic resonance has been a hot topic in the field of photodetection in the last decade. By interfacing a plasmonic metal with a semiconductor, the photoelectric conversion mechanism, based on hot carrier emission, is capable of overcoming the band gap limitation imposed by the band-to-band transition of the semiconductor. To date, most of the existing studies focus on plasmonic structural engineering in a single metal-semiconductor (MS) junction system and their responsivities are still quite low in comparison to conventional semiconductor, material-based photodetection platforms. Herein, we propose a new architecture of metal-semiconductor-metal (MSM) junctions on a silicon platform to achieve efficient hot hole collection at infrared wavelengths with a photoconductance gain mechanism. The coplanar interdigitated MSM electrode’s configuration forms a back-to-back Schottky diode and acts simultaneously as the plasmonic absorber/emitter, relying on the hot-spots enriched on the random Au/Si nanoholes structure. The hot hole-mediated photoelectric response was extended far beyond the cut-off wavelength of the silicon. The proposed MSM device with an interdigitated electrode design yields a very high photoconductive gain, leading to a photocurrent responsivity up to several A/W, which is found to be at least 1000 times higher than that of the existing hot carrier based photodetection strategies.https://www.mdpi.com/1420-3049/27/20/6922plasmonichot carriersphotoconductorphotodetectionmetal-semiconductor-metal |
| spellingShingle | Zhiwei Sun Yongsheng Zhong Yajin Dong Qilin Zheng Xianghong Nan Zhong Liu Long Wen Qin Chen Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction Molecules plasmonic hot carriers photoconductor photodetection metal-semiconductor-metal |
| title | Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction |
| title_full | Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction |
| title_fullStr | Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction |
| title_full_unstemmed | Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction |
| title_short | Plasmonic Near-Infrared Photoconductor Based on Hot Hole Collection in the Metal-Semiconductor-Metal Junction |
| title_sort | plasmonic near infrared photoconductor based on hot hole collection in the metal semiconductor metal junction |
| topic | plasmonic hot carriers photoconductor photodetection metal-semiconductor-metal |
| url | https://www.mdpi.com/1420-3049/27/20/6922 |
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