Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field‐Effect Transistors

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field‐Effect Transistors

Abstract Molybdenum ditelluride (MoTe2) exhibits immense potential in post‐silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe2 allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low‐carr...

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Bibliographic Details
Main Authors: Abde Mayeen Shafi, Md Gius Uddin, Xiaoqi Cui, Fida Ali, Faisal Ahmed, Mohamed Radwan, Susobhan Das, Naveed Mehmood, Zhipei Sun, Harri Lipsanen
Format: Article
Language:English
Published: Wiley 2023-10-01
Series:Advanced Science
Subjects:
MoTe2
Al2O3
tensile strain
carrier mobility
metal–insulator transition
Online Access:https://doi.org/10.1002/advs.202303437

Internet

https://doi.org/10.1002/advs.202303437

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