A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications
An ultra-wideband (UWB) low noise amplifier (LNA) for 3.3⁻13.0 GHz wireless applications using 90 nm CMOS is proposed in this paper. The proposed LNA uses an improved common-gate (CG) topology utilizing feedback body biasing (FBB), which improves noise figure (NF) by a considerable amount....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-10-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/8/4/42 |
| Summary: | An ultra-wideband (UWB) low noise amplifier (LNA) for 3.3⁻13.0 GHz wireless applications using 90 nm CMOS is proposed in this paper. The proposed LNA uses an improved common-gate (CG) topology utilizing feedback body biasing (FBB), which improves noise figure (NF) by a considerable amount. Parallel-series tuned LC network was used between the common-gate first stage and the cascoded common-source (CS) stage to achieve the maximum signal flow from CG to CS stage. Improved CS topology with a series inductor at the drain terminal in the second stage connected and cascoded CS third stage provides high power gain (<i>S</i><sub>21</sub>) and bandwidth enhancement throughout the complete UWB. A common-drain buffer stage at the output provides high output reflection coefficient (<i>S</i><sub>22</sub>). It achieves an average power gain (<i>S</i><sub>21</sub>) of 14.7 ± 0.5 dB with a noise figure (<i>NF</i>) of 3.0⁻3.7 dB. It has an input reflection coefficient (<i>S</i><sub>11</sub>) less than −11.7 dB for 3.3⁻13.0 GHz frequency and output reflection coefficient (<i>S</i><sub>22</sub>) of less than −10.6 dB with a very high reversion isolation (<i>S</i><sub>12</sub>) of less than −72.4 dB. It consumes only 5.2 mW from a 0.7 V power supply. |
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| ISSN: | 2079-9268 |