Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

This work presents a comprehensive comparison of switchable electromechanical transducers in an AlN/GaN heterostructure toward the goal of reconfigurable RF building blocks in next-generation ad hoc radios. The transducers’ inherent switching was achieved by depleting a 2D electron gas (2DEG) channe...

Full description

Bibliographic Details
Main Authors:	Imtiaz Ahmed, Dana Weinstein
Format:	Article
Language:	English
Published:	MDPI AG 2021-04-01
Series:	Micromachines
Subjects:	MEMS resonator GaN heterostructure 2DEG switchable piezoelectric
Online Access:	https://www.mdpi.com/2072-666X/12/4/461

Similar Items

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
by: Dmitri S. Arteev, et al.
Published: (2022-12-01)

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
by: Muhaimin Haziq, et al.
Published: (2022-12-01)

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
by: Tian Li Duan, et al.
Published: (2017-08-01)

Modeling of 2DEG characteristics of In<sub>x</sub>Al<sub>1−x</sub>N/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect
by: Jian Qin, et al.
Published: (2018-12-01)

Direct Deposition of CVD Diamond Layers on Top of GaN Membranes
by: Tibor Izsák, et al.
Published: (2020-12-01)

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation
by: Gene Sheu, et al.
Published: (2022-01-01)

The Role of GaN in the Heterostructure WS<sub>2</sub>/GaN for SERS Applications
by: Tsung-Shine Ko, et al.
Published: (2023-04-01)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
by: Xiaowei Wang, et al.
Published: (2020-10-01)

Piezoelectric MEMS Acoustic Transducer with Electrically-Tunable Resonant Frequency
by: Alessandro Nastro, et al.
Published: (2022-01-01)

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures
by: Mohammad Abdul Alim, et al.
Published: (2021-05-01)

Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures
by: Wenping Gu, et al.
Published: (2018-05-01)

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices
by: Tadao Hashimoto, et al.
Published: (2022-08-01)

Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures
by: Emilis Šermukšnis, et al.
Published: (2022-11-01)

GaN Monolithic PWM Generator With Dynamic Offset Compensation
by: Katia Samperi, et al.
Published: (2023-01-01)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01)

Energetics of Interfaces and Strain Partition in GaN/AlN Pseudomorphic Superlattices
by: Theodoros Karakostas, et al.
Published: (2023-08-01)

Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination
by: Yuan An, et al.
Published: (2023-02-01)

Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
by: Weinstein, Dana, et al.
Published: (2014)

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
by: Xiaoyu Ding, et al.
Published: (2023-03-01)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection
by: Balaadithya Uppalapati, et al.
Published: (2023-08-01)

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
by: Roberto Macaluso, et al.
Published: (2020-06-01)

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives
by: Seyed Abolfazl Mortazavizadeh, et al.
Published: (2021-11-01)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01)

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm
by: Stefan Thalhammer, et al.
Published: (2022-01-01)

GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
by: Kuntal Barman, et al.
Published: (2023-01-01)

GaN Laser Diode Technology for Visible-Light Communications
by: Stephen P. Najda, et al.
Published: (2022-04-01)

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process
by: Yuan Ji, et al.
Published: (2023-04-01)

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods
by: S. Vitusevich, et al.
Published: (2023-06-01)

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K
by: An Yang, et al.
Published: (2023-04-01)

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
by: Hyeon-Ji Kim, et al.
Published: (2023-10-01)

Diamond/GaN HEMTs: Where from and Where to?
by: Joana C. Mendes, et al.
Published: (2022-01-01)

Optical Properties of GaN Thin Flim
by: Salma M. Shaban
Published: (2009-12-01)

Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside
by: Simonas Indrišiūnas, et al.
Published: (2021-04-01)

Resonant Raman Scattering in Boron-Implanted GaN
by: Yi Peng, et al.
Published: (2022-01-01)

Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs
by: Ling Yang, et al.
Published: (2022-01-01)

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
by: Li, Hanchao, et al.
Published: (2024)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

Passivation of Surface States in GaN by NiO Particles
by: Martin Velazquez-Rizo, et al.
Published: (2022-01-01)