Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
Main Authors: | Kalyan Jyoti Sarkar, Biswajit Pal, Pallab Banerji |
---|---|
Format: | Article |
Language: | English |
Published: |
American Chemical Society
2019-02-01
|
Series: | ACS Omega |
Online Access: | http://dx.doi.org/10.1021/acsomega.8b03301 |
Similar Items
-
Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
by: Song Lee, et al.
Published: (2023-12-01) -
Pentacene integrated thin-film transistors and circuits
by: Nausieda, Ivan Alexander
Published: (2010) -
Threshold voltage in pentacene field effect transistors with parylene dielectric
by: Wang, Annie I. (Annie I-Jen), 1981-
Published: (2005) -
Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
by: Yuan Du, et al.
Published: (2021-01-01) -
The bias-stress effect in pentacene organic thin-film transistors
by: Ryu, Kyungbum
Published: (2010)