Large positive magnetoresistance and high mobility in topological insulator candidate LaP
Abstract We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low t...
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| Format: | Article |
| Language: | English |
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Springer
2023-11-01
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| Series: | Quantum Frontiers |
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| Online Access: | https://doi.org/10.1007/s44214-023-00038-w |
| _version_ | 1797630019072163840 |
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| author | Desheng Wu Jianlin Luo |
| author_facet | Desheng Wu Jianlin Luo |
| author_sort | Desheng Wu |
| collection | DOAJ |
| description | Abstract We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low temperature and high magnetic field of T = 2 $T= 2$ K and B = 9 $B= 9$ T, large positive magnetoresistance (LMR) of 500% was discovered. The Hall effect measurements show that the conduction carriers are dominated by holes among the temperature range from 300 K to 2 K, the carrier concentration n h = 4.94 × 10 19 $n_{h} =4.94\times 10^{19}$ cm−3 and n e = 5.02 × 10 16 $n_{e} =5.02\times 10^{16}$ cm−3 and the mobility of LaP reached as high as μ h = 1.57 × 10 4 $\mu _{h}=1.57\times 10^{4}$ cm2 V−1 S−1 and μ e = 1.55 × 10 3 $\mu _{e} = 1.55\times 10^{3}$ cm2 V−1 S−1 obtained at 2 K, which can be explained by multiband model physics like other topological quantum material systems with large MR. LaP shows diamagnetism over a wide temperature range from 2 K to 300 K without any magnetic phase transition by susceptibility measurements. No evidence of phase transitions from 2 K to 300 K was observed in the specific heat measurement. The electronic specific heat coefficient is obtained 0.538 m J mol−1 K−2 for LaP single crystal, which responds to a small electron density state near the Fermi level. Our results would be helpful in renewing interest in studying emergent phenomena arisen from topological semimetals. LaP offers a platform for understanding the interactions between large magnetoresistance, high mobility and topological band structure. |
| first_indexed | 2024-03-11T11:02:09Z |
| format | Article |
| id | doaj.art-5b627bfeed6745a1ae5e526e42964a71 |
| institution | Directory Open Access Journal |
| issn | 2731-6106 |
| language | English |
| last_indexed | 2024-03-11T11:02:09Z |
| publishDate | 2023-11-01 |
| publisher | Springer |
| record_format | Article |
| series | Quantum Frontiers |
| spelling | doaj.art-5b627bfeed6745a1ae5e526e42964a712023-11-12T12:25:43ZengSpringerQuantum Frontiers2731-61062023-11-01211610.1007/s44214-023-00038-wLarge positive magnetoresistance and high mobility in topological insulator candidate LaPDesheng Wu0Jianlin Luo1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesAbstract We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low temperature and high magnetic field of T = 2 $T= 2$ K and B = 9 $B= 9$ T, large positive magnetoresistance (LMR) of 500% was discovered. The Hall effect measurements show that the conduction carriers are dominated by holes among the temperature range from 300 K to 2 K, the carrier concentration n h = 4.94 × 10 19 $n_{h} =4.94\times 10^{19}$ cm−3 and n e = 5.02 × 10 16 $n_{e} =5.02\times 10^{16}$ cm−3 and the mobility of LaP reached as high as μ h = 1.57 × 10 4 $\mu _{h}=1.57\times 10^{4}$ cm2 V−1 S−1 and μ e = 1.55 × 10 3 $\mu _{e} = 1.55\times 10^{3}$ cm2 V−1 S−1 obtained at 2 K, which can be explained by multiband model physics like other topological quantum material systems with large MR. LaP shows diamagnetism over a wide temperature range from 2 K to 300 K without any magnetic phase transition by susceptibility measurements. No evidence of phase transitions from 2 K to 300 K was observed in the specific heat measurement. The electronic specific heat coefficient is obtained 0.538 m J mol−1 K−2 for LaP single crystal, which responds to a small electron density state near the Fermi level. Our results would be helpful in renewing interest in studying emergent phenomena arisen from topological semimetals. LaP offers a platform for understanding the interactions between large magnetoresistance, high mobility and topological band structure.https://doi.org/10.1007/s44214-023-00038-wSingle crystal synthesisLarge magnetoresistanceHall effectBand structure |
| spellingShingle | Desheng Wu Jianlin Luo Large positive magnetoresistance and high mobility in topological insulator candidate LaP Quantum Frontiers Single crystal synthesis Large magnetoresistance Hall effect Band structure |
| title | Large positive magnetoresistance and high mobility in topological insulator candidate LaP |
| title_full | Large positive magnetoresistance and high mobility in topological insulator candidate LaP |
| title_fullStr | Large positive magnetoresistance and high mobility in topological insulator candidate LaP |
| title_full_unstemmed | Large positive magnetoresistance and high mobility in topological insulator candidate LaP |
| title_short | Large positive magnetoresistance and high mobility in topological insulator candidate LaP |
| title_sort | large positive magnetoresistance and high mobility in topological insulator candidate lap |
| topic | Single crystal synthesis Large magnetoresistance Hall effect Band structure |
| url | https://doi.org/10.1007/s44214-023-00038-w |
| work_keys_str_mv | AT deshengwu largepositivemagnetoresistanceandhighmobilityintopologicalinsulatorcandidatelap AT jianlinluo largepositivemagnetoresistanceandhighmobilityintopologicalinsulatorcandidatelap |