Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2017-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5000519 |
| _version_ | 1830344950562160640 |
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| author | Syed Ahmed Al Muyeed Wei Sun Xiongliang Wei Renbo Song Daniel D. Koleske Nelson Tansu Jonathan J. Wierer Jr. |
| author_facet | Syed Ahmed Al Muyeed Wei Sun Xiongliang Wei Renbo Song Daniel D. Koleske Nelson Tansu Jonathan J. Wierer Jr. |
| author_sort | Syed Ahmed Al Muyeed |
| collection | DOAJ |
| description | Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (202¯5) reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination. |
| first_indexed | 2024-12-19T22:34:57Z |
| format | Article |
| id | doaj.art-5b63c8f31fe64e49b8424f4fa167da9e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T22:34:57Z |
| publishDate | 2017-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-5b63c8f31fe64e49b8424f4fa167da9e2022-12-21T20:03:14ZengAIP Publishing LLCAIP Advances2158-32262017-10-01710105312105312-710.1063/1.5000519041710ADVStrain compensation in InGaN-based multiple quantum wells using AlGaN interlayersSyed Ahmed Al Muyeed0Wei Sun1Xiongliang Wei2Renbo Song3Daniel D. Koleske4Nelson Tansu5Jonathan J. Wierer Jr.6Center for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USACenter for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USACenter for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USACenter for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USASandia National Laboratories, Albuquerque, NM 87185, USACenter for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USACenter for Photonics and Nanoelectronics and Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USAData are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (202¯5) reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination.http://dx.doi.org/10.1063/1.5000519 |
| spellingShingle | Syed Ahmed Al Muyeed Wei Sun Xiongliang Wei Renbo Song Daniel D. Koleske Nelson Tansu Jonathan J. Wierer Jr. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers AIP Advances |
| title | Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers |
| title_full | Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers |
| title_fullStr | Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers |
| title_full_unstemmed | Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers |
| title_short | Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers |
| title_sort | strain compensation in ingan based multiple quantum wells using algan interlayers |
| url | http://dx.doi.org/10.1063/1.5000519 |
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