A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems
For stable and effective control of the sensor system, analog sensor signals such as temperature, pressure, and electromagnetic fields should be accurately measured and converted to digital bits. However, radiation environments, such as space, flight, nuclear power plants, and nuclear fusion reactor...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-12-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/20/1/171 |
| _version_ | 1798042382090895360 |
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| author | Duckhoon Ro Changhong Min Myounggon Kang Ik Joon Chang Hyung-Min Lee |
| author_facet | Duckhoon Ro Changhong Min Myounggon Kang Ik Joon Chang Hyung-Min Lee |
| author_sort | Duckhoon Ro |
| collection | DOAJ |
| description | For stable and effective control of the sensor system, analog sensor signals such as temperature, pressure, and electromagnetic fields should be accurately measured and converted to digital bits. However, radiation environments, such as space, flight, nuclear power plants, and nuclear fusion reactors, as well as high-reliability applications, such as automotive semiconductor systems, suffer from radiation effects that degrade the performance of the sensor readout system including analog-to-digital converters (ADCs) and cause system malfunctions. This paper investigates an optimal ADC structure in radiation environments and proposes a successive- approximation-register (SAR) ADC using delay-based double feedback flip-flops to enhance the system tolerance against radiation effects, including total ionizing dose (TID) and single event effects (SEE). The proposed flip-flop was fabricated using 130 nm complementary metal−oxide−semiconductor (CMOS) silicon-on-insulator (SOI) process, and its radiation tolerance was measured in actual radiation test facilities. Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools. |
| first_indexed | 2024-04-11T22:34:43Z |
| format | Article |
| id | doaj.art-5b74179f81504eadb4c46479dd0855f1 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T22:34:43Z |
| publishDate | 2019-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-5b74179f81504eadb4c46479dd0855f12022-12-22T03:59:15ZengMDPI AGSensors1424-82202019-12-0120117110.3390/s20010171s20010171A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout SystemsDuckhoon Ro0Changhong Min1Myounggon Kang2Ik Joon Chang3Hyung-Min Lee4School of Electrical Engineering, Korea University, Seoul 02841, KoreaDepartment of Electronic Engineering, Kyung Hee University, Yongin 17104, KoreaDepartment of Electronics Engineering, Korea National University of Transportation, Chungju 27469, KoreaDepartment of Electronic Engineering, Kyung Hee University, Yongin 17104, KoreaSchool of Electrical Engineering, Korea University, Seoul 02841, KoreaFor stable and effective control of the sensor system, analog sensor signals such as temperature, pressure, and electromagnetic fields should be accurately measured and converted to digital bits. However, radiation environments, such as space, flight, nuclear power plants, and nuclear fusion reactors, as well as high-reliability applications, such as automotive semiconductor systems, suffer from radiation effects that degrade the performance of the sensor readout system including analog-to-digital converters (ADCs) and cause system malfunctions. This paper investigates an optimal ADC structure in radiation environments and proposes a successive- approximation-register (SAR) ADC using delay-based double feedback flip-flops to enhance the system tolerance against radiation effects, including total ionizing dose (TID) and single event effects (SEE). The proposed flip-flop was fabricated using 130 nm complementary metal−oxide−semiconductor (CMOS) silicon-on-insulator (SOI) process, and its radiation tolerance was measured in actual radiation test facilities. Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.https://www.mdpi.com/1424-8220/20/1/171radiation-hardenedsar adcflip-flopseetidcompact modelsoft error |
| spellingShingle | Duckhoon Ro Changhong Min Myounggon Kang Ik Joon Chang Hyung-Min Lee A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems Sensors radiation-hardened sar adc flip-flop see tid compact model soft error |
| title | A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems |
| title_full | A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems |
| title_fullStr | A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems |
| title_full_unstemmed | A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems |
| title_short | A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems |
| title_sort | radiation hardened sar adc with delay based dual feedback flip flops for sensor readout systems |
| topic | radiation-hardened sar adc flip-flop see tid compact model soft error |
| url | https://www.mdpi.com/1424-8220/20/1/171 |
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