AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer
Three different insulator layers SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were used as a gate dielectric and passivation layer in AlGaN/GaN metal⁻insulator⁻semiconductor high-electron-mobility transistors (MIS-HEMT). The SiN<sub>x</sub>, SiON...
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MDPI AG
2018-12-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/7/12/416 |
| _version_ | 1798039987668647936 |
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| author | Kuiwei Geng Ditao Chen Quanbin Zhou Hong Wang |
| author_facet | Kuiwei Geng Ditao Chen Quanbin Zhou Hong Wang |
| author_sort | Kuiwei Geng |
| collection | DOAJ |
| description | Three different insulator layers SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were used as a gate dielectric and passivation layer in AlGaN/GaN metal⁻insulator⁻semiconductor high-electron-mobility transistors (MIS-HEMT). The SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and I<sub>on</sub>/I<sub>off</sub> ratio. The SiN<sub>x</sub> MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO<sub>2</sub> MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal⁻insulator⁻semiconductor (MIS) diode. As for interface traps, the SiN<sub>x</sub> MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO<sub>2</sub> MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiN<sub>x</sub> and SiON both have advantages and disadvantages. |
| first_indexed | 2024-04-11T22:01:17Z |
| format | Article |
| id | doaj.art-5b773bb3708c47e5a6b991a33bba9084 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T22:01:17Z |
| publishDate | 2018-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-5b773bb3708c47e5a6b991a33bba90842022-12-22T04:00:56ZengMDPI AGElectronics2079-92922018-12-0171241610.3390/electronics7120416electronics7120416AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation LayerKuiwei Geng0Ditao Chen1Quanbin Zhou2Hong Wang3Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaThree different insulator layers SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were used as a gate dielectric and passivation layer in AlGaN/GaN metal⁻insulator⁻semiconductor high-electron-mobility transistors (MIS-HEMT). The SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and I<sub>on</sub>/I<sub>off</sub> ratio. The SiN<sub>x</sub> MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO<sub>2</sub> MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal⁻insulator⁻semiconductor (MIS) diode. As for interface traps, the SiN<sub>x</sub> MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO<sub>2</sub> MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiN<sub>x</sub> and SiON both have advantages and disadvantages.https://www.mdpi.com/2079-9292/7/12/416gallium nitrideMISHEMTdielectric layerinterface trapscurrent collapsePECVD |
| spellingShingle | Kuiwei Geng Ditao Chen Quanbin Zhou Hong Wang AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer Electronics gallium nitride MISHEMT dielectric layer interface traps current collapse PECVD |
| title | AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer |
| title_full | AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer |
| title_fullStr | AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer |
| title_full_unstemmed | AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer |
| title_short | AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer |
| title_sort | algan gan mis hemt with pecvd sin sub x sub sion sio sub 2 sub as gate dielectric and passivation layer |
| topic | gallium nitride MISHEMT dielectric layer interface traps current collapse PECVD |
| url | https://www.mdpi.com/2079-9292/7/12/416 |
| work_keys_str_mv | AT kuiweigeng alganganmishemtwithpecvdsinsubxsubsionsiosub2subasgatedielectricandpassivationlayer AT ditaochen alganganmishemtwithpecvdsinsubxsubsionsiosub2subasgatedielectricandpassivationlayer AT quanbinzhou alganganmishemtwithpecvdsinsubxsubsionsiosub2subasgatedielectricandpassivationlayer AT hongwang alganganmishemtwithpecvdsinsubxsubsionsiosub2subasgatedielectricandpassivationlayer |