AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer

Three different insulator layers SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were used as a gate dielectric and passivation layer in AlGaN/GaN metal&#8315;insulator&#8315;semiconductor high-electron-mobility transistors (MIS-HEMT). The SiN<sub>x</sub>, SiON...

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Bibliographic Details
Main Authors: Kuiwei Geng, Ditao Chen, Quanbin Zhou, Hong Wang
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/7/12/416