AlGaN/GaN MIS-HEMT with PECVD SiN<sub>x</sub>, SiON, SiO<sub>2</sub> as Gate Dielectric and Passivation Layer
Three different insulator layers SiN<sub>x</sub>, SiON, and SiO<sub>2</sub> were used as a gate dielectric and passivation layer in AlGaN/GaN metal⁻insulator⁻semiconductor high-electron-mobility transistors (MIS-HEMT). The SiN<sub>x</sub>, SiON...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-12-01
|
Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/7/12/416 |