Facile synthesis of Ge1−xSnx nanowires
We report a facile one-pot solution phase synthesis of one-dimensional Ge _1− _x Sn _x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight...
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IOP Publishing
2020-01-01
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Series: | Materials Research Express |
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Online Access: | https://doi.org/10.1088/2053-1591/ab96fb |
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author | Ying Xu Najeh Al-Salim Teck Hock Lim Chris W Bumby Soshan Cheong Richard D Tilley |
author_facet | Ying Xu Najeh Al-Salim Teck Hock Lim Chris W Bumby Soshan Cheong Richard D Tilley |
author_sort | Ying Xu |
collection | DOAJ |
description | We report a facile one-pot solution phase synthesis of one-dimensional Ge _1− _x Sn _x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge _1− _x Sn _x nanowires were obtained with an average diameter of 60 ± 20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 〈111〉, 〈110〉 or 〈112〉 directions, in common with other group IV nanowires. Growth in the 〈112〉 direction was found to be accompanied by longitudinal planar twin defects. |
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format | Article |
id | doaj.art-5b7f830601de4fedb607343835035f22 |
institution | Directory Open Access Journal |
issn | 2053-1591 |
language | English |
last_indexed | 2024-03-12T15:35:19Z |
publishDate | 2020-01-01 |
publisher | IOP Publishing |
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series | Materials Research Express |
spelling | doaj.art-5b7f830601de4fedb607343835035f222023-08-09T16:14:54ZengIOP PublishingMaterials Research Express2053-15912020-01-017606400410.1088/2053-1591/ab96fbFacile synthesis of Ge1−xSnx nanowiresYing Xu0https://orcid.org/0000-0003-1165-9727Najeh Al-Salim1Teck Hock Lim2Chris W Bumby3Soshan Cheong4https://orcid.org/0000-0001-6133-0829Richard D Tilley5Department of Chemical and Materials Engineering, The University of Auckland , Auckland, New ZealandCallaghan Innovation, PO Box 31-310,69 Gracefield Road, Lower Hutt, 5040, New ZealandDepartment of Physical Science, Faculty of Applied Sciences, Tunku Abdul Rahman University College , Kuala Lumpur, MalaysiaRobinson Research Institute, Victoria University of Wellington , Wellington, New ZealandMark Wainwright Analytical Centre, University of New South Wales , Sydney, AustraliaMark Wainwright Analytical Centre, University of New South Wales , Sydney, Australia; School of Chemistry, University of New South Wales , Sydney, AustraliaWe report a facile one-pot solution phase synthesis of one-dimensional Ge _1− _x Sn _x nanowires. These nanowires were synthesized in situ via a solution-liquid-solid (SLS) approach in which triphenylchlorogermane was reduced by sodium borohydride in the presence of tin nanoparticle seeds. Straight Ge _1− _x Sn _x nanowires were obtained with an average diameter of 60 ± 20 nm and an approximate aspect ratio of 100. Energy-dispersive x-ray spectroscopy (EDX) and powder x-ray diffraction (PXRD) analysis revealed that tin was homogeneously incorporated within the germanium lattices at levels up to 10 at%, resulting in a measured lattice constant of 0.5742 nm. The crystal structure and growth orientation of the nanowires were investigated using high-resolution transmission electron microscopy (HRTEM). The nanowires adopted a face-centred-cubic structure with individual wires exhibiting growth along either the 〈111〉, 〈110〉 or 〈112〉 directions, in common with other group IV nanowires. Growth in the 〈112〉 direction was found to be accompanied by longitudinal planar twin defects.https://doi.org/10.1088/2053-1591/ab96fbGe1−xSnx nanowirereduction reactioncrystal structureself-catalysed solution-liquid solid growth |
spellingShingle | Ying Xu Najeh Al-Salim Teck Hock Lim Chris W Bumby Soshan Cheong Richard D Tilley Facile synthesis of Ge1−xSnx nanowires Materials Research Express Ge1−xSnx nanowire reduction reaction crystal structure self-catalysed solution-liquid solid growth |
title | Facile synthesis of Ge1−xSnx nanowires |
title_full | Facile synthesis of Ge1−xSnx nanowires |
title_fullStr | Facile synthesis of Ge1−xSnx nanowires |
title_full_unstemmed | Facile synthesis of Ge1−xSnx nanowires |
title_short | Facile synthesis of Ge1−xSnx nanowires |
title_sort | facile synthesis of ge1 xsnx nanowires |
topic | Ge1−xSnx nanowire reduction reaction crystal structure self-catalysed solution-liquid solid growth |
url | https://doi.org/10.1088/2053-1591/ab96fb |
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