Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage
Single-layer graphene (SLG) sheets can exhibit thermoelectric properties under the control of gate voltage. The controlled factors and regulation mechanism of SLG thermoelectric properties have become research hotspots. In this paper, a SLG thermoelectric parameter model considering carrier concentr...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8846682/ |
| _version_ | 1818855326184636416 |
|---|---|
| author | Ning Wang Cong Meng Zhi-Hao Ma Cong Gao Hong-Zhi Jia Guo-Rong Sui Xiu-Min Gao |
| author_facet | Ning Wang Cong Meng Zhi-Hao Ma Cong Gao Hong-Zhi Jia Guo-Rong Sui Xiu-Min Gao |
| author_sort | Ning Wang |
| collection | DOAJ |
| description | Single-layer graphene (SLG) sheets can exhibit thermoelectric properties under the control of gate voltage. The controlled factors and regulation mechanism of SLG thermoelectric properties have become research hotspots. In this paper, a SLG thermoelectric parameter model considering carrier concentration and mobility with temperature and gate voltage is proposed. Based on the proposed model, the square resistance (Rs) and Seebeck coefficient (S) of the SLG are calculated. The results show that the maximum value of Rs decreases from 5.8 KΩ to 3.2 KΩ at the Dirac voltage when the temperature increases from 100 K to 500 K. A large and stable S can be obtained at high voltages and temperatures. The maximum value of S can reach 161.3 μV/K at T = 500 K, exhibiting a more obvious thermoelectric characteristic. Simultaneously, the saturation law of the power factor (Q) with the change of gate voltage and the amplitude regulation of Q by temperature are obtained. This work can provide a theoretical basis for analyzing the thermoelectric characteristics of SLG. |
| first_indexed | 2024-12-19T08:06:49Z |
| format | Article |
| id | doaj.art-5b83681bab0b46e5a462643023531098 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T08:06:49Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-5b83681bab0b46e5a4626430235310982022-12-21T20:29:44ZengIEEEIEEE Access2169-35362019-01-01713932913933610.1109/ACCESS.2019.29431818846682Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate VoltageNing Wang0Cong Meng1https://orcid.org/0000-0001-7462-1940Zhi-Hao Ma2Cong Gao3Hong-Zhi Jia4https://orcid.org/0000-0003-3304-0167Guo-Rong Sui5Xiu-Min Gao6Shanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaShanghai Key Laboratory of Modern System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, Shanghai, ChinaSingle-layer graphene (SLG) sheets can exhibit thermoelectric properties under the control of gate voltage. The controlled factors and regulation mechanism of SLG thermoelectric properties have become research hotspots. In this paper, a SLG thermoelectric parameter model considering carrier concentration and mobility with temperature and gate voltage is proposed. Based on the proposed model, the square resistance (Rs) and Seebeck coefficient (S) of the SLG are calculated. The results show that the maximum value of Rs decreases from 5.8 KΩ to 3.2 KΩ at the Dirac voltage when the temperature increases from 100 K to 500 K. A large and stable S can be obtained at high voltages and temperatures. The maximum value of S can reach 161.3 μV/K at T = 500 K, exhibiting a more obvious thermoelectric characteristic. Simultaneously, the saturation law of the power factor (Q) with the change of gate voltage and the amplitude regulation of Q by temperature are obtained. This work can provide a theoretical basis for analyzing the thermoelectric characteristics of SLG.https://ieeexplore.ieee.org/document/8846682/Grapheneseebeck coefficientsquare resistancethermoelectric effect |
| spellingShingle | Ning Wang Cong Meng Zhi-Hao Ma Cong Gao Hong-Zhi Jia Guo-Rong Sui Xiu-Min Gao Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage IEEE Access Graphene seebeck coefficient square resistance thermoelectric effect |
| title | Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage |
| title_full | Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage |
| title_fullStr | Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage |
| title_full_unstemmed | Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage |
| title_short | Thermoelectric Parameter Modeling of Single-Layer Graphene Considering Carrier Concentration and Mobility With Temperature and Gate Voltage |
| title_sort | thermoelectric parameter modeling of single layer graphene considering carrier concentration and mobility with temperature and gate voltage |
| topic | Graphene seebeck coefficient square resistance thermoelectric effect |
| url | https://ieeexplore.ieee.org/document/8846682/ |
| work_keys_str_mv | AT ningwang thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT congmeng thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT zhihaoma thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT conggao thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT hongzhijia thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT guorongsui thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage AT xiumingao thermoelectricparametermodelingofsinglelayergrapheneconsideringcarrierconcentrationandmobilitywithtemperatureandgatevoltage |