Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a...
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MDPI AG
2019-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/10/1392 |
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| author | Chia-Hsun Hsu Shih-Mao Liu Shui-Yang Lien Xiao-Ying Zhang Yun-Shao Cho Yan-Hua Huang Sam Zhang Song-Yan Chen Wen-Zhang Zhu |
| author_facet | Chia-Hsun Hsu Shih-Mao Liu Shui-Yang Lien Xiao-Ying Zhang Yun-Shao Cho Yan-Hua Huang Sam Zhang Song-Yan Chen Wen-Zhang Zhu |
| author_sort | Chia-Hsun Hsu |
| collection | DOAJ |
| description | In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiN<sub>x</sub>) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiN<sub>x</sub> layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices. |
| first_indexed | 2024-12-14T21:05:27Z |
| format | Article |
| id | doaj.art-5baf6799b79e4fd2b0bb8c51b52cc946 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-14T21:05:27Z |
| publishDate | 2019-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-5baf6799b79e4fd2b0bb8c51b52cc9462022-12-21T22:47:28ZengMDPI AGNanomaterials2079-49912019-09-01910139210.3390/nano9101392nano9101392Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar CellsChia-Hsun Hsu0Shih-Mao Liu1Shui-Yang Lien2Xiao-Ying Zhang3Yun-Shao Cho4Yan-Hua Huang5Sam Zhang6Song-Yan Chen7Wen-Zhang Zhu8School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaMechanical and Automation Engineering, Da-Yeh University, Changhua 51591, TaiwanSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaDepartment of Materials Science and Engineering, Da-Yeh University, Changhua 51591, TaiwanChengyi University College, Jimei University, Xiamen 361021, ChinaFaculty of Materials and Energy, Southwest University, Chongqing 400715, ChinaDepartment of Physics, OSED, Xiamen University, Xiamen 361005, ChinaSchool of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaIn this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiN<sub>x</sub>) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiN<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiN<sub>x</sub> layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.https://www.mdpi.com/2079-4991/9/10/1392black siliconpassivationmetal-assisted chemical etching |
| spellingShingle | Chia-Hsun Hsu Shih-Mao Liu Shui-Yang Lien Xiao-Ying Zhang Yun-Shao Cho Yan-Hua Huang Sam Zhang Song-Yan Chen Wen-Zhang Zhu Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells Nanomaterials black silicon passivation metal-assisted chemical etching |
| title | Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells |
| title_full | Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells |
| title_fullStr | Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells |
| title_full_unstemmed | Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells |
| title_short | Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells |
| title_sort | low reflection and low surface recombination rate nano needle texture formed by two step etching for solar cells |
| topic | black silicon passivation metal-assisted chemical etching |
| url | https://www.mdpi.com/2079-4991/9/10/1392 |
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