In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr
Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane ma...
| Автори: | , , , , , , , , , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
American Physical Society
2021-09-01
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| Серія: | Physical Review Research |
| Онлайн доступ: | http://doi.org/10.1103/PhysRevResearch.3.033253 |
| _version_ | 1827285653214199808 |
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| author | Mátyás Kocsis Oleksandr Zheliuk Péter Makk Endre Tóvári Péter Kun Oleg Evgenevich Tereshchenko Konstantin Aleksandrovich Kokh Takashi Taniguchi Kenji Watanabe Jianting Ye Szabolcs Csonka |
| author_facet | Mátyás Kocsis Oleksandr Zheliuk Péter Makk Endre Tóvári Péter Kun Oleg Evgenevich Tereshchenko Konstantin Aleksandrovich Kokh Takashi Taniguchi Kenji Watanabe Jianting Ye Szabolcs Csonka |
| author_sort | Mátyás Kocsis |
| collection | DOAJ |
| description | Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals. |
| first_indexed | 2024-04-24T10:18:22Z |
| format | Article |
| id | doaj.art-5bf901b8defb44c38c1a66f801d1831a |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:18:22Z |
| publishDate | 2021-09-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-5bf901b8defb44c38c1a66f801d1831a2024-04-12T17:14:04ZengAmerican Physical SocietyPhysical Review Research2643-15642021-09-013303325310.1103/PhysRevResearch.3.033253In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBrMátyás KocsisOleksandr ZheliukPéter MakkEndre TóváriPéter KunOleg Evgenevich TereshchenkoKonstantin Aleksandrovich KokhTakashi TaniguchiKenji WatanabeJianting YeSzabolcs CsonkaNonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.http://doi.org/10.1103/PhysRevResearch.3.033253 |
| spellingShingle | Mátyás Kocsis Oleksandr Zheliuk Péter Makk Endre Tóvári Péter Kun Oleg Evgenevich Tereshchenko Konstantin Aleksandrovich Kokh Takashi Taniguchi Kenji Watanabe Jianting Ye Szabolcs Csonka In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr Physical Review Research |
| title | In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr |
| title_full | In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr |
| title_fullStr | In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr |
| title_full_unstemmed | In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr |
| title_short | In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr |
| title_sort | in situ tuning of symmetry breaking induced nonreciprocity in the giant rashba semiconductor bitebr |
| url | http://doi.org/10.1103/PhysRevResearch.3.033253 |
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