Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers
Interfacial polarization is generally a major cause of dielectric loss, but its exact contribution to the electromagnetic wave (EMW) absorption capacity of absorbers remains to be elucidated. In this work, SnO<sub>2</sub>@rGO composite (S2) with tight interfaces formed by chemical bonds...
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MDPI AG
2022-12-01
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| author | Hao Shen Xinyu Shi Zhen Wang Pengfei Zou Zhaoyang Hou Chunlong Xu Limin Zhang Hongjing Wu |
| author_facet | Hao Shen Xinyu Shi Zhen Wang Pengfei Zou Zhaoyang Hou Chunlong Xu Limin Zhang Hongjing Wu |
| author_sort | Hao Shen |
| collection | DOAJ |
| description | Interfacial polarization is generally a major cause of dielectric loss, but its exact contribution to the electromagnetic wave (EMW) absorption capacity of absorbers remains to be elucidated. In this work, SnO<sub>2</sub>@rGO composite (S2) with tight interfaces formed by chemical bonds and SnO<sub>2</sub>/rGO mixture (S3) were synthesized by a simple chemical route followed by further calcined in argon, respectively. Compared with pure SnO<sub>2</sub> (S1) and S3, S2 exhibits much better EMW-dissipation ability, with a smaller minimum reflection loss (<i>RL<sub>min</sub></i>) value of −20.5 dB at a matched thickness of 5 mm and a larger effective absorption bandwidth (<i>f</i><sub>e</sub>) value of 5.8 GHz (from 11 GHz to 16.8 GHz) at 3.2 mm. By comprehensively comparing the defects, dipoles, and interfaces in S2 and S3, it is concluded that the excellent EMW absorption capacity of S2 is mainly caused by strong dielectric loss dominated by interfacial polarization as well as suitable impedance matching. This study provides an insight into the exact contribution of interfacial polarization to the EMW-dissipation ability of absorbers, showing that the EMW absorption of graphene-based composites can be effectively promoted by constructing well-connected interfaces between graphene and absorbers. |
| first_indexed | 2024-03-09T16:06:05Z |
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| language | English |
| last_indexed | 2024-03-09T16:06:05Z |
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| spelling | doaj.art-5c022b7c23be4f4fa7c5ce13e23e52292023-11-24T16:41:49ZengMDPI AGMetals2075-47012022-12-011212215410.3390/met12122154Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave AbsorbersHao Shen0Xinyu Shi1Zhen Wang2Pengfei Zou3Zhaoyang Hou4Chunlong Xu5Limin Zhang6Hongjing Wu7Department of Applied Physics, School of Science, Chang’an University, Xi’an 710064, ChinaChang’an Dublin International College of Transportation, Chang’an University, Xi’an 710064, ChinaDepartment of Applied Physics, School of Science, Chang’an University, Xi’an 710064, ChinaDepartment of Applied Physics, School of Science, Chang’an University, Xi’an 710064, ChinaDepartment of Applied Physics, School of Science, Chang’an University, Xi’an 710064, ChinaDepartment of Applied Physics, School of Science, Chang’an University, Xi’an 710064, ChinaMOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710072, ChinaMOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710072, ChinaInterfacial polarization is generally a major cause of dielectric loss, but its exact contribution to the electromagnetic wave (EMW) absorption capacity of absorbers remains to be elucidated. In this work, SnO<sub>2</sub>@rGO composite (S2) with tight interfaces formed by chemical bonds and SnO<sub>2</sub>/rGO mixture (S3) were synthesized by a simple chemical route followed by further calcined in argon, respectively. Compared with pure SnO<sub>2</sub> (S1) and S3, S2 exhibits much better EMW-dissipation ability, with a smaller minimum reflection loss (<i>RL<sub>min</sub></i>) value of −20.5 dB at a matched thickness of 5 mm and a larger effective absorption bandwidth (<i>f</i><sub>e</sub>) value of 5.8 GHz (from 11 GHz to 16.8 GHz) at 3.2 mm. By comprehensively comparing the defects, dipoles, and interfaces in S2 and S3, it is concluded that the excellent EMW absorption capacity of S2 is mainly caused by strong dielectric loss dominated by interfacial polarization as well as suitable impedance matching. This study provides an insight into the exact contribution of interfacial polarization to the EMW-dissipation ability of absorbers, showing that the EMW absorption of graphene-based composites can be effectively promoted by constructing well-connected interfaces between graphene and absorbers.https://www.mdpi.com/2075-4701/12/12/2154SnO<sub>2</sub>@rGOinterfacial polarizationdielectric losselectromagnetic wave absorption |
| spellingShingle | Hao Shen Xinyu Shi Zhen Wang Pengfei Zou Zhaoyang Hou Chunlong Xu Limin Zhang Hongjing Wu Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers Metals SnO<sub>2</sub>@rGO interfacial polarization dielectric loss electromagnetic wave absorption |
| title | Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers |
| title_full | Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers |
| title_fullStr | Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers |
| title_full_unstemmed | Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers |
| title_short | Interfacial Polarization-Dominated Dielectric Loss in SnO<sub>2</sub>@rGO Electromagnetic Wave Absorbers |
| title_sort | interfacial polarization dominated dielectric loss in sno sub 2 sub rgo electromagnetic wave absorbers |
| topic | SnO<sub>2</sub>@rGO interfacial polarization dielectric loss electromagnetic wave absorption |
| url | https://www.mdpi.com/2075-4701/12/12/2154 |
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