Unconventional resistivity scaling in topological semimetal CoSi
Abstract Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we stu...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-01-01
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| Series: | npj Quantum Materials |
| Online Access: | https://doi.org/10.1038/s41535-022-00535-6 |
| _version_ | 1797952692632420352 |
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| author | Shang-Wei Lien Ion Garate Utkarsh Bajpai Cheng-Yi Huang Chuang-Han Hsu Yi-Hsin Tu Nicholas A. Lanzillo Arun Bansil Tay-Rong Chang Gengchiau Liang Hsin Lin Ching-Tzu Chen |
| author_facet | Shang-Wei Lien Ion Garate Utkarsh Bajpai Cheng-Yi Huang Chuang-Han Hsu Yi-Hsin Tu Nicholas A. Lanzillo Arun Bansil Tay-Rong Chang Gengchiau Liang Hsin Lin Ching-Tzu Chen |
| author_sort | Shang-Wei Lien |
| collection | DOAJ |
| description | Abstract Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green’s function methods. We show that there exists a critical thickness d c dividing different scaling trends. Above d c , when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases as in conventional metals. Below d c where bulk states are depopulated, the persistent Fermi-arc remnant states give rise to decreasing resistivity down to the ultrathin limit, unlike topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening in back-end-of-line interconnect applications. |
| first_indexed | 2024-04-10T22:50:22Z |
| format | Article |
| id | doaj.art-5c33fe2abff24c238e2a9771dec740fa |
| institution | Directory Open Access Journal |
| issn | 2397-4648 |
| language | English |
| last_indexed | 2024-04-10T22:50:22Z |
| publishDate | 2023-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Quantum Materials |
| spelling | doaj.art-5c33fe2abff24c238e2a9771dec740fa2023-01-15T12:03:42ZengNature Portfolionpj Quantum Materials2397-46482023-01-01811910.1038/s41535-022-00535-6Unconventional resistivity scaling in topological semimetal CoSiShang-Wei Lien0Ion Garate1Utkarsh Bajpai2Cheng-Yi Huang3Chuang-Han Hsu4Yi-Hsin Tu5Nicholas A. Lanzillo6Arun Bansil7Tay-Rong Chang8Gengchiau Liang9Hsin Lin10Ching-Tzu Chen11Department of Physics, National Cheng Kung UniversityDépartement de Physique, Institut Quantique and Regroupement Québécois sur les Matériaux de Pointe, Université de SherbrookeIBM ResearchDepartment of Physics, Northeastern UniversityInstitute of Physics, Academia SinicaDepartment of Physics, National Cheng Kung UniversityIBM ResearchDepartment of Physics, Northeastern UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Electrical and Computer Engineering, College of Design and Engineering, National University of SingaporeInstitute of Physics, Academia SinicaIBM T.J. Watson Research CenterAbstract Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green’s function methods. We show that there exists a critical thickness d c dividing different scaling trends. Above d c , when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases as in conventional metals. Below d c where bulk states are depopulated, the persistent Fermi-arc remnant states give rise to decreasing resistivity down to the ultrathin limit, unlike topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening in back-end-of-line interconnect applications.https://doi.org/10.1038/s41535-022-00535-6 |
| spellingShingle | Shang-Wei Lien Ion Garate Utkarsh Bajpai Cheng-Yi Huang Chuang-Han Hsu Yi-Hsin Tu Nicholas A. Lanzillo Arun Bansil Tay-Rong Chang Gengchiau Liang Hsin Lin Ching-Tzu Chen Unconventional resistivity scaling in topological semimetal CoSi npj Quantum Materials |
| title | Unconventional resistivity scaling in topological semimetal CoSi |
| title_full | Unconventional resistivity scaling in topological semimetal CoSi |
| title_fullStr | Unconventional resistivity scaling in topological semimetal CoSi |
| title_full_unstemmed | Unconventional resistivity scaling in topological semimetal CoSi |
| title_short | Unconventional resistivity scaling in topological semimetal CoSi |
| title_sort | unconventional resistivity scaling in topological semimetal cosi |
| url | https://doi.org/10.1038/s41535-022-00535-6 |
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