TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory

Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of I...

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Bibliographic Details
Main Authors: Ziming Xu, Jinshun Bi, Mengxin Liu, Yu Zhang, Baihong Chen, Zijian Zhang
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Micromachines
Subjects:
emerging memory
non-volatility
low-energy switching
resonant tunneling structure
Online Access:https://www.mdpi.com/2072-666X/14/12/2207

Internet

https://www.mdpi.com/2072-666X/14/12/2207

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