Thermoelectric properties of Pb and Na dual doped BiCuSeO
BiCuSeO is a promising thermoelectric material not only because of its good thermoelectric properties, but also earth abundant constituents. In this report, Pb and Na have been simultaneously doped at the Bi site of BiCuSeO. Doping Pb is beneficial for the Seebeck coefficient whereas doping Na maint...
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| Format: | Article |
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AIP Publishing LLC
2019-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5066296 |
| _version_ | 1811254928748838912 |
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| author | Sayan Das Suneesh Meledath Valiyaveettil Kuei-Hsien Chen Satyam Suwas Ramesh Chandra Mallik |
| author_facet | Sayan Das Suneesh Meledath Valiyaveettil Kuei-Hsien Chen Satyam Suwas Ramesh Chandra Mallik |
| author_sort | Sayan Das |
| collection | DOAJ |
| description | BiCuSeO is a promising thermoelectric material not only because of its good thermoelectric properties, but also earth abundant constituents. In this report, Pb and Na have been simultaneously doped at the Bi site of BiCuSeO. Doping Pb is beneficial for the Seebeck coefficient whereas doping Na maintains the hole mobility. Both the dopants increase the carrier concentration and reduce the thermal conductivity by point-defect scattering. The samples with nominal composition Bi0.985-xNa0.015PbxCuSeO (x=0.00, 0.04, 0.06 and 0.08) were prepared using two-step solid-state synthesis. The X-ray diffraction pattern reveals a small amount of Bi2O2.5 phase (<1 vol. %) which is responsible for adversely affecting the electrical conductivity of all the samples. Both the Seebeck coefficient and electrical resistivity decrease with increasing doping fraction due to increasing hole concentration. The highest power factor of 530 μW/mK2 was obtained for Bi0.905Na0.015Pb0.08CuSeO sample at 773 K because of moderate Seebeck coefficient and low electrical resistivity. A low lattice thermal conductivity of 0.37 W/m-K at 773 K was obtained in the Bi0.905Na0.015Pb0.08CuSeO. Due to this low lattice thermal conductivity combined with the high power factor, a zT of 0.63 was obtained for the Bi0.905Na0.015Pb0.08CuSeO sample at 773 K. |
| first_indexed | 2024-04-12T17:15:50Z |
| format | Article |
| id | doaj.art-5c5a00439e8141f293176e1313586a7a |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T17:15:50Z |
| publishDate | 2019-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-5c5a00439e8141f293176e1313586a7a2022-12-22T03:23:39ZengAIP Publishing LLCAIP Advances2158-32262019-01-0191015025015025-710.1063/1.5066296098901ADVThermoelectric properties of Pb and Na dual doped BiCuSeOSayan Das0Suneesh Meledath Valiyaveettil1Kuei-Hsien Chen2Satyam Suwas3Ramesh Chandra Mallik4Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore, IndiaInstitute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Sec. 4, Roosevelt Road, Taipei, TaiwanInstitute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Sec. 4, Roosevelt Road, Taipei, TaiwanDepartment of Materials Engineering, Indian Institute of Science, Bangalore 560012, IndiaThermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore, IndiaBiCuSeO is a promising thermoelectric material not only because of its good thermoelectric properties, but also earth abundant constituents. In this report, Pb and Na have been simultaneously doped at the Bi site of BiCuSeO. Doping Pb is beneficial for the Seebeck coefficient whereas doping Na maintains the hole mobility. Both the dopants increase the carrier concentration and reduce the thermal conductivity by point-defect scattering. The samples with nominal composition Bi0.985-xNa0.015PbxCuSeO (x=0.00, 0.04, 0.06 and 0.08) were prepared using two-step solid-state synthesis. The X-ray diffraction pattern reveals a small amount of Bi2O2.5 phase (<1 vol. %) which is responsible for adversely affecting the electrical conductivity of all the samples. Both the Seebeck coefficient and electrical resistivity decrease with increasing doping fraction due to increasing hole concentration. The highest power factor of 530 μW/mK2 was obtained for Bi0.905Na0.015Pb0.08CuSeO sample at 773 K because of moderate Seebeck coefficient and low electrical resistivity. A low lattice thermal conductivity of 0.37 W/m-K at 773 K was obtained in the Bi0.905Na0.015Pb0.08CuSeO. Due to this low lattice thermal conductivity combined with the high power factor, a zT of 0.63 was obtained for the Bi0.905Na0.015Pb0.08CuSeO sample at 773 K.http://dx.doi.org/10.1063/1.5066296 |
| spellingShingle | Sayan Das Suneesh Meledath Valiyaveettil Kuei-Hsien Chen Satyam Suwas Ramesh Chandra Mallik Thermoelectric properties of Pb and Na dual doped BiCuSeO AIP Advances |
| title | Thermoelectric properties of Pb and Na dual doped BiCuSeO |
| title_full | Thermoelectric properties of Pb and Na dual doped BiCuSeO |
| title_fullStr | Thermoelectric properties of Pb and Na dual doped BiCuSeO |
| title_full_unstemmed | Thermoelectric properties of Pb and Na dual doped BiCuSeO |
| title_short | Thermoelectric properties of Pb and Na dual doped BiCuSeO |
| title_sort | thermoelectric properties of pb and na dual doped bicuseo |
| url | http://dx.doi.org/10.1063/1.5066296 |
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