Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet
Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2021-01-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-020-00184-y |
| _version_ | 1819129602213150720 |
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| author | Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu |
| author_facet | Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu |
| author_sort | Yuanjie Chen |
| collection | DOAJ |
| description | Abstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices. |
| first_indexed | 2024-12-22T08:46:19Z |
| format | Article |
| id | doaj.art-5c6140ed6c774240be009b4864af5903 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-12-22T08:46:19Z |
| publishDate | 2021-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-5c6140ed6c774240be009b4864af59032022-12-21T18:32:06ZengNature Portfolionpj 2D Materials and Applications2397-71322021-01-01511810.1038/s41699-020-00184-yStrong and tunable spin–orbit interaction in a single crystalline InSb nanosheetYuanjie Chen0Shaoyun Huang1Dong Pan2Jianhong Xue3Li Zhang4Jianhua Zhao5H. Q. Xu6Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking UniversityBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking UniversityState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking UniversityBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking UniversityState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesBeijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking UniversityAbstract A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.https://doi.org/10.1038/s41699-020-00184-y |
| spellingShingle | Yuanjie Chen Shaoyun Huang Dong Pan Jianhong Xue Li Zhang Jianhua Zhao H. Q. Xu Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet npj 2D Materials and Applications |
| title | Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet |
| title_full | Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet |
| title_fullStr | Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet |
| title_full_unstemmed | Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet |
| title_short | Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet |
| title_sort | strong and tunable spin orbit interaction in a single crystalline insb nanosheet |
| url | https://doi.org/10.1038/s41699-020-00184-y |
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