Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers
Abstract 2D materials are regarded as ideal candidates for fabricating flexible devices in electronics, due to their intrinsic clean surface and malleability. However, due to the weak interaction between 2D materials and the substrates underneath, bending or stretching will inevitably cause severe s...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201023 |
| _version_ | 1797772523739283456 |
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| author | Mingyan Liu Yibin Zhao Fang Wu Licheng Wang Jiamin Yao Yunwei Yang Cong Liu Yi Wan Erjun Kan |
| author_facet | Mingyan Liu Yibin Zhao Fang Wu Licheng Wang Jiamin Yao Yunwei Yang Cong Liu Yi Wan Erjun Kan |
| author_sort | Mingyan Liu |
| collection | DOAJ |
| description | Abstract 2D materials are regarded as ideal candidates for fabricating flexible devices in electronics, due to their intrinsic clean surface and malleability. However, due to the weak interaction between 2D materials and the substrates underneath, bending or stretching will inevitably cause severe slippage, which degrades the device's performance or even leads to failure. The realization of no slippage between 2D materials and substrates under ultrahigh strain has become a key topic in the field of flexible electronics. Here, a strategy to overcome this limitation, by which strain can be effectively transferred to 2D materials is demonstrated. By applying this improved method to few‐layer β‐InSe, it is found that the loaded strain reaches as high as 7.2% without any slippage, along with an apparent redshift of ≈4.18 cm−1 in Raman scattering signals. The evolution trend of bandgap observed in the luminous properties of β‐InSe is consistent with the author's density functional theory (DFT) calculations. This convenient method can be intensively expanded to other van der Waals (vdW) layered materials and sheds light on flexible electronic applications. |
| first_indexed | 2024-03-12T21:53:06Z |
| format | Article |
| id | doaj.art-5c682eeee02149528de9587c8d6980d1 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:53:06Z |
| publishDate | 2023-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-5c682eeee02149528de9587c8d6980d12023-07-26T01:35:30ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-02-0192n/an/a10.1002/aelm.202201023Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe LayersMingyan Liu0Yibin Zhao1Fang Wu2Licheng Wang3Jiamin Yao4Yunwei Yang5Cong Liu6Yi Wan7Erjun Kan8MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaMIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaCollege of Information Science and Technology Nanjing Forestry University Nanjing 210037 ChinaCivil Engineering & Applied Mechanics Lab School of Science Nanjing University of Science and Technology Nanjing 210094 ChinaMIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaMIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaCivil Engineering & Applied Mechanics Lab School of Science Nanjing University of Science and Technology Nanjing 210094 ChinaMIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaMIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied Physics Nanjing University of Science and Technology Nanjing 210094 ChinaAbstract 2D materials are regarded as ideal candidates for fabricating flexible devices in electronics, due to their intrinsic clean surface and malleability. However, due to the weak interaction between 2D materials and the substrates underneath, bending or stretching will inevitably cause severe slippage, which degrades the device's performance or even leads to failure. The realization of no slippage between 2D materials and substrates under ultrahigh strain has become a key topic in the field of flexible electronics. Here, a strategy to overcome this limitation, by which strain can be effectively transferred to 2D materials is demonstrated. By applying this improved method to few‐layer β‐InSe, it is found that the loaded strain reaches as high as 7.2% without any slippage, along with an apparent redshift of ≈4.18 cm−1 in Raman scattering signals. The evolution trend of bandgap observed in the luminous properties of β‐InSe is consistent with the author's density functional theory (DFT) calculations. This convenient method can be intensively expanded to other van der Waals (vdW) layered materials and sheds light on flexible electronic applications.https://doi.org/10.1002/aelm.202201023density functional theory calculationsindium selenideoptical characterizationstrain engineering |
| spellingShingle | Mingyan Liu Yibin Zhao Fang Wu Licheng Wang Jiamin Yao Yunwei Yang Cong Liu Yi Wan Erjun Kan Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers Advanced Electronic Materials density functional theory calculations indium selenide optical characterization strain engineering |
| title | Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers |
| title_full | Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers |
| title_fullStr | Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers |
| title_full_unstemmed | Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers |
| title_short | Realization of Ultrahigh Strain Modulation in Two‐Dimensional β‐InSe Layers |
| title_sort | realization of ultrahigh strain modulation in two dimensional β inse layers |
| topic | density functional theory calculations indium selenide optical characterization strain engineering |
| url | https://doi.org/10.1002/aelm.202201023 |
| work_keys_str_mv | AT mingyanliu realizationofultrahighstrainmodulationintwodimensionalbinselayers AT yibinzhao realizationofultrahighstrainmodulationintwodimensionalbinselayers AT fangwu realizationofultrahighstrainmodulationintwodimensionalbinselayers AT lichengwang realizationofultrahighstrainmodulationintwodimensionalbinselayers AT jiaminyao realizationofultrahighstrainmodulationintwodimensionalbinselayers AT yunweiyang realizationofultrahighstrainmodulationintwodimensionalbinselayers AT congliu realizationofultrahighstrainmodulationintwodimensionalbinselayers AT yiwan realizationofultrahighstrainmodulationintwodimensionalbinselayers AT erjunkan realizationofultrahighstrainmodulationintwodimensionalbinselayers |