Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx....

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Main Authors: Y Pan, D Wu, J R Angevaare, H Luigjes, E Frantzeskakis, N de Jong, E van Heumen, T V Bay, B Zwartsenberg, Y K Huang, M Snelder, A Brinkman, M S Golden, A de Visser
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
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Online Access:https://doi.org/10.1088/1367-2630/16/12/123035
_version_ 1797751439817179136
author Y Pan
D Wu
J R Angevaare
H Luigjes
E Frantzeskakis
N de Jong
E van Heumen
T V Bay
B Zwartsenberg
Y K Huang
M Snelder
A Brinkman
M S Golden
A de Visser
author_facet Y Pan
D Wu
J R Angevaare
H Luigjes
E Frantzeskakis
N de Jong
E van Heumen
T V Bay
B Zwartsenberg
Y K Huang
M Snelder
A Brinkman
M S Golden
A de Visser
author_sort Y Pan
collection DOAJ
description In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx.doi.org/10.1103/PhysRevB.84.165311 84 http://dx.doi.org/10.1103/PhysRevB.84.165311 ). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi $_{1.46}$ Sb $_{0.54}$ Te $_{1.7}$ Se $_{1.3}$ . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μ m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.
first_indexed 2024-03-12T16:49:33Z
format Article
id doaj.art-5c8d58d35ae14474b9e3d923372db947
institution Directory Open Access Journal
issn 1367-2630
language English
last_indexed 2024-03-12T16:49:33Z
publishDate 2014-01-01
publisher IOP Publishing
record_format Article
series New Journal of Physics
spelling doaj.art-5c8d58d35ae14474b9e3d923372db9472023-08-08T11:24:54ZengIOP PublishingNew Journal of Physics1367-26302014-01-01161212303510.1088/1367-2630/16/12/123035Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport studyY Pan0D Wu1J R Angevaare2H Luigjes3E Frantzeskakis4N de Jong5E van Heumen6T V Bay7B Zwartsenberg8Y K Huang9M Snelder10A Brinkman11M S Golden12A de Visser13Van der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente , 7500 AE Enschede, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente , 7500 AE Enschede, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsIn 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx.doi.org/10.1103/PhysRevB.84.165311 84 http://dx.doi.org/10.1103/PhysRevB.84.165311 ). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi $_{1.46}$ Sb $_{0.54}$ Te $_{1.7}$ Se $_{1.3}$ . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μ m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.https://doi.org/10.1088/1367-2630/16/12/123035topological insulatormagnetotransportsurface statesweak antilocalization72.20.My73.25.+i
spellingShingle Y Pan
D Wu
J R Angevaare
H Luigjes
E Frantzeskakis
N de Jong
E van Heumen
T V Bay
B Zwartsenberg
Y K Huang
M Snelder
A Brinkman
M S Golden
A de Visser
Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
New Journal of Physics
topological insulator
magnetotransport
surface states
weak antilocalization
72.20.My
73.25.+i
title Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
title_full Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
title_fullStr Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
title_full_unstemmed Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
title_short Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
title_sort low carrier concentration crystals of the topological insulator bi2 xsbxte3 ysey a magnetotransport study
topic topological insulator
magnetotransport
surface states
weak antilocalization
72.20.My
73.25.+i
url https://doi.org/10.1088/1367-2630/16/12/123035
work_keys_str_mv AT ypan lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT dwu lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT jrangevaare lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT hluigjes lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT efrantzeskakis lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT ndejong lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT evanheumen lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT tvbay lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT bzwartsenberg lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT ykhuang lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT msnelder lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT abrinkman lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT msgolden lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy
AT adevisser lowcarrierconcentrationcrystalsofthetopologicalinsulatorbi2xsbxte3yseyamagnetotransportstudy