Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx....
Main Authors: | , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
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IOP Publishing
2014-01-01
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Series: | New Journal of Physics |
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Online Access: | https://doi.org/10.1088/1367-2630/16/12/123035 |
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author | Y Pan D Wu J R Angevaare H Luigjes E Frantzeskakis N de Jong E van Heumen T V Bay B Zwartsenberg Y K Huang M Snelder A Brinkman M S Golden A de Visser |
author_facet | Y Pan D Wu J R Angevaare H Luigjes E Frantzeskakis N de Jong E van Heumen T V Bay B Zwartsenberg Y K Huang M Snelder A Brinkman M S Golden A de Visser |
author_sort | Y Pan |
collection | DOAJ |
description | In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx.doi.org/10.1103/PhysRevB.84.165311 84 http://dx.doi.org/10.1103/PhysRevB.84.165311 ). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi $_{1.46}$ Sb $_{0.54}$ Te $_{1.7}$ Se $_{1.3}$ . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μ m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states. |
first_indexed | 2024-03-12T16:49:33Z |
format | Article |
id | doaj.art-5c8d58d35ae14474b9e3d923372db947 |
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issn | 1367-2630 |
language | English |
last_indexed | 2024-03-12T16:49:33Z |
publishDate | 2014-01-01 |
publisher | IOP Publishing |
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series | New Journal of Physics |
spelling | doaj.art-5c8d58d35ae14474b9e3d923372db9472023-08-08T11:24:54ZengIOP PublishingNew Journal of Physics1367-26302014-01-01161212303510.1088/1367-2630/16/12/123035Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport studyY Pan0D Wu1J R Angevaare2H Luigjes3E Frantzeskakis4N de Jong5E van Heumen6T V Bay7B Zwartsenberg8Y K Huang9M Snelder10A Brinkman11M S Golden12A de Visser13Van der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente , 7500 AE Enschede, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente , 7500 AE Enschede, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals—Zeeman Institute, University of Amsterdam , Science Park 904, 1098 XH Amsterdam, The NetherlandsIn 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb) _2 (Te,Se) _3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B http://dx.doi.org/10.1103/PhysRevB.84.165311 84 http://dx.doi.org/10.1103/PhysRevB.84.165311 ). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi $_{1.46}$ Sb $_{0.54}$ Te $_{1.7}$ Se $_{1.3}$ . The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μ m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $\alpha \simeq -1$ as expected for transport dominated by topological surface states.https://doi.org/10.1088/1367-2630/16/12/123035topological insulatormagnetotransportsurface statesweak antilocalization72.20.My73.25.+i |
spellingShingle | Y Pan D Wu J R Angevaare H Luigjes E Frantzeskakis N de Jong E van Heumen T V Bay B Zwartsenberg Y K Huang M Snelder A Brinkman M S Golden A de Visser Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study New Journal of Physics topological insulator magnetotransport surface states weak antilocalization 72.20.My 73.25.+i |
title | Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study |
title_full | Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study |
title_fullStr | Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study |
title_full_unstemmed | Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study |
title_short | Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: a magnetotransport study |
title_sort | low carrier concentration crystals of the topological insulator bi2 xsbxte3 ysey a magnetotransport study |
topic | topological insulator magnetotransport surface states weak antilocalization 72.20.My 73.25.+i |
url | https://doi.org/10.1088/1367-2630/16/12/123035 |
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