Graphene Induced Diamond Nucleation on Tungsten
Chemical vapor deposition (CVD) of a diamond film on a non-diamond substrate begins with the insertion of diamond seeds or the formation of diamond nuclei on the substrate. For the deposition of a smooth, large-area and pin-hole free diamond film that adheres well to the substrate, diamond seeds or...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9258917/ |
| _version_ | 1818417286716850176 |
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| author | Yonhua Tzeng Chih-Chun Chang |
| author_facet | Yonhua Tzeng Chih-Chun Chang |
| author_sort | Yonhua Tzeng |
| collection | DOAJ |
| description | Chemical vapor deposition (CVD) of a diamond film on a non-diamond substrate begins with the insertion of diamond seeds or the formation of diamond nuclei on the substrate. For the deposition of a smooth, large-area and pin-hole free diamond film that adheres well to the substrate, diamond seeds or nuclei need to be of high density, uniformly distributed and adhere well to the substrate. Diamond seeding is not a diamond nucleation process. Bias enhanced nucleation (BEN) is the most effective means of heterogeneous nucleation of diamond for CVD diamond. It is based on a negative biasing voltage between the substrate and the diamond CVD plasma to accelerate positive ions from the plasma to bombard the substrate. Both direct diamond seeding and BEN have technical barriers in practical applications. New diamond nucleation techniques are desired. This paper reports novel heterogenous diamond nucleation along edge line of graphene on tungsten leading to the deposition of continuous diamond films. Based on experimental observation, a diamond nucleation mechanism assisted by sp3 C-W bonds at graphene edge is proposed. It is wished that scientists will become interested in revealing the precise diamond nucleation mechanism. With that, further optimization of this invention may lead to a new, complementary diamond nucleation process for practical deposition of diamond films. |
| first_indexed | 2024-12-14T12:04:22Z |
| format | Article |
| id | doaj.art-5c9cb69e2dfa4b5cb2d3a67258211e4e |
| institution | Directory Open Access Journal |
| issn | 2644-1292 |
| language | English |
| last_indexed | 2024-12-14T12:04:22Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Nanotechnology |
| spelling | doaj.art-5c9cb69e2dfa4b5cb2d3a67258211e4e2022-12-21T23:01:54ZengIEEEIEEE Open Journal of Nanotechnology2644-12922020-01-01111712710.1109/OJNANO.2020.30380559258917Graphene Induced Diamond Nucleation on TungstenYonhua Tzeng0https://orcid.org/0000-0003-4763-1144Chih-Chun Chang1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan, TaiwanChemical vapor deposition (CVD) of a diamond film on a non-diamond substrate begins with the insertion of diamond seeds or the formation of diamond nuclei on the substrate. For the deposition of a smooth, large-area and pin-hole free diamond film that adheres well to the substrate, diamond seeds or nuclei need to be of high density, uniformly distributed and adhere well to the substrate. Diamond seeding is not a diamond nucleation process. Bias enhanced nucleation (BEN) is the most effective means of heterogeneous nucleation of diamond for CVD diamond. It is based on a negative biasing voltage between the substrate and the diamond CVD plasma to accelerate positive ions from the plasma to bombard the substrate. Both direct diamond seeding and BEN have technical barriers in practical applications. New diamond nucleation techniques are desired. This paper reports novel heterogenous diamond nucleation along edge line of graphene on tungsten leading to the deposition of continuous diamond films. Based on experimental observation, a diamond nucleation mechanism assisted by sp3 C-W bonds at graphene edge is proposed. It is wished that scientists will become interested in revealing the precise diamond nucleation mechanism. With that, further optimization of this invention may lead to a new, complementary diamond nucleation process for practical deposition of diamond films.https://ieeexplore.ieee.org/document/9258917/GraphenediamondheterogeneousnucleationPECVD |
| spellingShingle | Yonhua Tzeng Chih-Chun Chang Graphene Induced Diamond Nucleation on Tungsten IEEE Open Journal of Nanotechnology Graphene diamond heterogeneous nucleation PECVD |
| title | Graphene Induced Diamond Nucleation on Tungsten |
| title_full | Graphene Induced Diamond Nucleation on Tungsten |
| title_fullStr | Graphene Induced Diamond Nucleation on Tungsten |
| title_full_unstemmed | Graphene Induced Diamond Nucleation on Tungsten |
| title_short | Graphene Induced Diamond Nucleation on Tungsten |
| title_sort | graphene induced diamond nucleation on tungsten |
| topic | Graphene diamond heterogeneous nucleation PECVD |
| url | https://ieeexplore.ieee.org/document/9258917/ |
| work_keys_str_mv | AT yonhuatzeng grapheneinduceddiamondnucleationontungsten AT chihchunchang grapheneinduceddiamondnucleationontungsten |