Electrical circuit model of ITO/AZO/Ge photodetector
In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2017-10-01
|
| Series: | Data in Brief |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352340917303335 |
| _version_ | 1819002032119349248 |
|---|---|
| author | Malkeshkumar Patel Joondong Kim |
| author_facet | Malkeshkumar Patel Joondong Kim |
| author_sort | Malkeshkumar Patel |
| collection | DOAJ |
| description | In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy. |
| first_indexed | 2024-12-20T22:58:39Z |
| format | Article |
| id | doaj.art-5cb0fbcb70654034bbc12a037480f048 |
| institution | Directory Open Access Journal |
| issn | 2352-3409 |
| language | English |
| last_indexed | 2024-12-20T22:58:39Z |
| publishDate | 2017-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Data in Brief |
| spelling | doaj.art-5cb0fbcb70654034bbc12a037480f0482022-12-21T19:24:03ZengElsevierData in Brief2352-34092017-10-0114C626710.1016/j.dib.2017.07.031Electrical circuit model of ITO/AZO/Ge photodetectorMalkeshkumar PatelJoondong KimIn this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.http://www.sciencedirect.com/science/article/pii/S2352340917303335ITO/AZO/Ge photodetectorR-C circuit modelHeterojunctionImpedance spectroscopy |
| spellingShingle | Malkeshkumar Patel Joondong Kim Electrical circuit model of ITO/AZO/Ge photodetector Data in Brief ITO/AZO/Ge photodetector R-C circuit model Heterojunction Impedance spectroscopy |
| title | Electrical circuit model of ITO/AZO/Ge photodetector |
| title_full | Electrical circuit model of ITO/AZO/Ge photodetector |
| title_fullStr | Electrical circuit model of ITO/AZO/Ge photodetector |
| title_full_unstemmed | Electrical circuit model of ITO/AZO/Ge photodetector |
| title_short | Electrical circuit model of ITO/AZO/Ge photodetector |
| title_sort | electrical circuit model of ito azo ge photodetector |
| topic | ITO/AZO/Ge photodetector R-C circuit model Heterojunction Impedance spectroscopy |
| url | http://www.sciencedirect.com/science/article/pii/S2352340917303335 |
| work_keys_str_mv | AT malkeshkumarpatel electricalcircuitmodelofitoazogephotodetector AT joondongkim electricalcircuitmodelofitoazogephotodetector |