Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers
Quantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically a...
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| Format: | Article |
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MDPI AG
2022-03-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/7/3504 |
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| author | Frédéric Grillot Weng W. Chow Bozhang Dong Shihao Ding Heming Huang John Bowers |
| author_facet | Frédéric Grillot Weng W. Chow Bozhang Dong Shihao Ding Heming Huang John Bowers |
| author_sort | Frédéric Grillot |
| collection | DOAJ |
| description | Quantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically and experimentally, the advantages of silicon-based quantum dot lasers for passive mode-locking applications. Using a frequency domain approach, i.e., with the laser electric field described in terms of a superposition of passive cavity eigenmodes, a precise quantitative description of the conditions for frequency comb and pulse train formation is supported, along with a concise explanation of the progression to mode locking via Adler’s equation. The path to transform-limited performance is discussed and compared to the experimental beat-note spectrum and mode-locked pulse generation. A theory/experiment comparison is also used to extract the experimental group velocity dispersion, which is a key obstacle to transform-limited performance. Finally, the linewidth enhancement contribution to the group velocity dispersion is investigated. For passively mode-locked quantum dot lasers directly grown on silicon, our experimental and theoretical investigations provide a self-consistent accounting of the multimode interactions giving rise to the locking mechanism, gain saturation, mode competition and carrier-induced refractive index. |
| first_indexed | 2024-03-09T12:06:39Z |
| format | Article |
| id | doaj.art-5ccadcb20f8c46b996efaf6298412d3c |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T12:06:39Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
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| series | Applied Sciences |
| spelling | doaj.art-5ccadcb20f8c46b996efaf6298412d3c2023-11-30T22:56:37ZengMDPI AGApplied Sciences2076-34172022-03-01127350410.3390/app12073504Multimode Physics in the Mode Locking of Semiconductor Quantum Dot LasersFrédéric Grillot0Weng W. Chow1Bozhang Dong2Shihao Ding3Heming Huang4John Bowers5Télécom Paris, Institut Polytechnique de Paris, 19 Place Marguerite Perey, 91120 Palaiseau, FranceSandia National Laboratories, Albuquerque, NM 87185-1086, USATélécom Paris, Institut Polytechnique de Paris, 19 Place Marguerite Perey, 91120 Palaiseau, FranceTélécom Paris, Institut Polytechnique de Paris, 19 Place Marguerite Perey, 91120 Palaiseau, FranceTélécom Paris, Institut Polytechnique de Paris, 19 Place Marguerite Perey, 91120 Palaiseau, FranceDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USAQuantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically and experimentally, the advantages of silicon-based quantum dot lasers for passive mode-locking applications. Using a frequency domain approach, i.e., with the laser electric field described in terms of a superposition of passive cavity eigenmodes, a precise quantitative description of the conditions for frequency comb and pulse train formation is supported, along with a concise explanation of the progression to mode locking via Adler’s equation. The path to transform-limited performance is discussed and compared to the experimental beat-note spectrum and mode-locked pulse generation. A theory/experiment comparison is also used to extract the experimental group velocity dispersion, which is a key obstacle to transform-limited performance. Finally, the linewidth enhancement contribution to the group velocity dispersion is investigated. For passively mode-locked quantum dot lasers directly grown on silicon, our experimental and theoretical investigations provide a self-consistent accounting of the multimode interactions giving rise to the locking mechanism, gain saturation, mode competition and carrier-induced refractive index.https://www.mdpi.com/2076-3417/12/7/3504quantum dotsemiconductor lasersmode lockingfrequency domain |
| spellingShingle | Frédéric Grillot Weng W. Chow Bozhang Dong Shihao Ding Heming Huang John Bowers Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers Applied Sciences quantum dot semiconductor lasers mode locking frequency domain |
| title | Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers |
| title_full | Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers |
| title_fullStr | Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers |
| title_full_unstemmed | Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers |
| title_short | Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers |
| title_sort | multimode physics in the mode locking of semiconductor quantum dot lasers |
| topic | quantum dot semiconductor lasers mode locking frequency domain |
| url | https://www.mdpi.com/2076-3417/12/7/3504 |
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