Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper
Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controll...
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| Format: | Article |
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MDPI AG
2023-08-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/16/5603 |
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| author | Yong Huang Jiamiao Ni Xiaoyu Shi Yu Wang Songsong Yao Yue Liu Tongxiang Fan |
| author_facet | Yong Huang Jiamiao Ni Xiaoyu Shi Yu Wang Songsong Yao Yue Liu Tongxiang Fan |
| author_sort | Yong Huang |
| collection | DOAJ |
| description | Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO<sub>2</sub>/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices. |
| first_indexed | 2024-03-10T23:46:28Z |
| format | Article |
| id | doaj.art-5d2c9e1564194b21bc985e0e0c3186de |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T23:46:28Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-5d2c9e1564194b21bc985e0e0c3186de2023-11-19T02:00:01ZengMDPI AGMaterials1996-19442023-08-011616560310.3390/ma16165603Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited CopperYong Huang0Jiamiao Ni1Xiaoyu Shi2Yu Wang3Songsong Yao4Yue Liu5Tongxiang Fan6State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaState Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaDirect in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO<sub>2</sub>/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices.https://www.mdpi.com/1996-1944/16/16/5603polymeric carbon sourcedielectric substratetwo-step thermal transformationmetallic copper catalysttransfer-free graphene film |
| spellingShingle | Yong Huang Jiamiao Ni Xiaoyu Shi Yu Wang Songsong Yao Yue Liu Tongxiang Fan Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper Materials polymeric carbon source dielectric substrate two-step thermal transformation metallic copper catalyst transfer-free graphene film |
| title | Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper |
| title_full | Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper |
| title_fullStr | Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper |
| title_full_unstemmed | Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper |
| title_short | Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper |
| title_sort | two step thermal transformation of multilayer graphene using polymeric carbon source assisted by physical vapor deposited copper |
| topic | polymeric carbon source dielectric substrate two-step thermal transformation metallic copper catalyst transfer-free graphene film |
| url | https://www.mdpi.com/1996-1944/16/16/5603 |
| work_keys_str_mv | AT yonghuang twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT jiamiaoni twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT xiaoyushi twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT yuwang twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT songsongyao twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT yueliu twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper AT tongxiangfan twostepthermaltransformationofmultilayergrapheneusingpolymericcarbonsourceassistedbyphysicalvapordepositedcopper |