Physics-Based Electrothermal Stress Evaluation Approach of IGBT Modules Combined With Artificial Neural Network Model

Physics-Based Electrothermal Stress Evaluation Approach of IGBT Modules Combined With Artificial Neural Network Model

Due to the disparate timescale behavior in the electrical and thermal aspects, achieving a balance between simulation efficiency and accuracy in electrothermal analysis of insulated gate bipolar transistor (IGBT) modules has been a challenging task. A physical-based electrothermal stress evaluation...

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Bibliographic Details
Main Authors: Yiping Lu, Enyao Xiang, Ankang Zhu, Hongyi Gao, Haoze Luo, Huan Yang, Rongxiang Zhao
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Artificial neural network (ANN)
electrothermal stress
physical model
insulated gate bipolar transistor (IGBT)
Online Access:https://ieeexplore.ieee.org/document/10214390/

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