The effect of ion irradiation on dephasing of coherent optical phonons in GaP
The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of...
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AIP Publishing LLC
2020-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0020810 |
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author | Takuto Ichikawa Yuta Saito Muneaki Hase |
author_facet | Takuto Ichikawa Yuta Saito Muneaki Hase |
author_sort | Takuto Ichikawa |
collection | DOAJ |
description | The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels. |
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institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-23T05:29:12Z |
publishDate | 2020-10-01 |
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spelling | doaj.art-5d5ae643afc54f29ac351df5051693192022-12-21T17:58:31ZengAIP Publishing LLCAIP Advances2158-32262020-10-011010105117105117-610.1063/5.0020810The effect of ion irradiation on dephasing of coherent optical phonons in GaPTakuto Ichikawa0Yuta Saito1Muneaki Hase2Department of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JapanDevice Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, JapanDepartment of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JapanThe dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.http://dx.doi.org/10.1063/5.0020810 |
spellingShingle | Takuto Ichikawa Yuta Saito Muneaki Hase The effect of ion irradiation on dephasing of coherent optical phonons in GaP AIP Advances |
title | The effect of ion irradiation on dephasing of coherent optical phonons in GaP |
title_full | The effect of ion irradiation on dephasing of coherent optical phonons in GaP |
title_fullStr | The effect of ion irradiation on dephasing of coherent optical phonons in GaP |
title_full_unstemmed | The effect of ion irradiation on dephasing of coherent optical phonons in GaP |
title_short | The effect of ion irradiation on dephasing of coherent optical phonons in GaP |
title_sort | effect of ion irradiation on dephasing of coherent optical phonons in gap |
url | http://dx.doi.org/10.1063/5.0020810 |
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