The effect of ion irradiation on dephasing of coherent optical phonons in GaP

The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of...

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Main Authors: Takuto Ichikawa, Yuta Saito, Muneaki Hase
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0020810
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author Takuto Ichikawa
Yuta Saito
Muneaki Hase
author_facet Takuto Ichikawa
Yuta Saito
Muneaki Hase
author_sort Takuto Ichikawa
collection DOAJ
description The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.
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spelling doaj.art-5d5ae643afc54f29ac351df5051693192022-12-21T17:58:31ZengAIP Publishing LLCAIP Advances2158-32262020-10-011010105117105117-610.1063/5.0020810The effect of ion irradiation on dephasing of coherent optical phonons in GaPTakuto Ichikawa0Yuta Saito1Muneaki Hase2Department of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JapanDevice Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, JapanDepartment of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, JapanThe dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga+ ion dose of 1013/cm2, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.http://dx.doi.org/10.1063/5.0020810
spellingShingle Takuto Ichikawa
Yuta Saito
Muneaki Hase
The effect of ion irradiation on dephasing of coherent optical phonons in GaP
AIP Advances
title The effect of ion irradiation on dephasing of coherent optical phonons in GaP
title_full The effect of ion irradiation on dephasing of coherent optical phonons in GaP
title_fullStr The effect of ion irradiation on dephasing of coherent optical phonons in GaP
title_full_unstemmed The effect of ion irradiation on dephasing of coherent optical phonons in GaP
title_short The effect of ion irradiation on dephasing of coherent optical phonons in GaP
title_sort effect of ion irradiation on dephasing of coherent optical phonons in gap
url http://dx.doi.org/10.1063/5.0020810
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