Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand
CsPbI<sub>3</sub> quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge t...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-09-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/12/18/3101 |
_version_ | 1797484197252694016 |
---|---|
author | Yusheng Li Dandan Wang Shuzi Hayase Yongge Yang Chao Ding Qing Shen |
author_facet | Yusheng Li Dandan Wang Shuzi Hayase Yongge Yang Chao Ding Qing Shen |
author_sort | Yusheng Li |
collection | DOAJ |
description | CsPbI<sub>3</sub> quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge transportation and extraction in PV devices. In this work, we use a fullerene derivative with the carboxylic anchor group ([SAM]C60) as the semiconductor ligand and build the type II heterojunction system of CsPbI<sub>3</sub> QDs and [SAM]C60 molecules. We find their combination enables obvious exciton dislocation and highly efficient photogenerated charge extraction. After the introduction of [SAM]C<sub>60</sub>, the exciton-binding energy of CsPbI<sub>3</sub> decreases from 30 meV to 7 meV and the fluorescence emission mechanism also exhibits obvious changes. Transient absorption spectroscopy visualizes a ~5 ps electron extraction rate in this system. The findings gained here may guide the development of perovskite QD devices. |
first_indexed | 2024-03-09T22:58:59Z |
format | Article |
id | doaj.art-5d63ad6090164c06b8ad6345fd48be93 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-09T22:58:59Z |
publishDate | 2022-09-01 |
publisher | MDPI AG |
record_format | Article |
series | Nanomaterials |
spelling | doaj.art-5d63ad6090164c06b8ad6345fd48be932023-11-23T18:05:32ZengMDPI AGNanomaterials2079-49912022-09-011218310110.3390/nano12183101Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor LigandYusheng Li0Dandan Wang1Shuzi Hayase2Yongge Yang3Chao Ding4Qing Shen5Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanFaculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanFaculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanFaculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanFaculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanFaculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, JapanCsPbI<sub>3</sub> quantum dots (QDs) are of great interest in new-generation photovoltaics (PVs) due to their excellent optoelectronic properties. The long and insulative ligands protect their phase stability and enable superior photoluminescence quantum yield, however, limiting charge transportation and extraction in PV devices. In this work, we use a fullerene derivative with the carboxylic anchor group ([SAM]C60) as the semiconductor ligand and build the type II heterojunction system of CsPbI<sub>3</sub> QDs and [SAM]C60 molecules. We find their combination enables obvious exciton dislocation and highly efficient photogenerated charge extraction. After the introduction of [SAM]C<sub>60</sub>, the exciton-binding energy of CsPbI<sub>3</sub> decreases from 30 meV to 7 meV and the fluorescence emission mechanism also exhibits obvious changes. Transient absorption spectroscopy visualizes a ~5 ps electron extraction rate in this system. The findings gained here may guide the development of perovskite QD devices.https://www.mdpi.com/2079-4991/12/18/3101CsPbI<sub>3</sub>quantum dotfullerene derivativeexciton dislocationextraction |
spellingShingle | Yusheng Li Dandan Wang Shuzi Hayase Yongge Yang Chao Ding Qing Shen Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand Nanomaterials CsPbI<sub>3</sub> quantum dot fullerene derivative exciton dislocation extraction |
title | Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand |
title_full | Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand |
title_fullStr | Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand |
title_full_unstemmed | Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand |
title_short | Efficient Exciton Dislocation and Ultrafast Charge Extraction in CsPbI<sub>3</sub> Perovskite Quantum Dots by Using Fullerene Derivative as Semiconductor Ligand |
title_sort | efficient exciton dislocation and ultrafast charge extraction in cspbi sub 3 sub perovskite quantum dots by using fullerene derivative as semiconductor ligand |
topic | CsPbI<sub>3</sub> quantum dot fullerene derivative exciton dislocation extraction |
url | https://www.mdpi.com/2079-4991/12/18/3101 |
work_keys_str_mv | AT yushengli efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand AT dandanwang efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand AT shuzihayase efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand AT yonggeyang efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand AT chaoding efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand AT qingshen efficientexcitondislocationandultrafastchargeextractionincspbisub3subperovskitequantumdotsbyusingfullerenederivativeassemiconductorligand |